Forward-thinking Mindset Powering Energy Infrastructure Evolution - onsemi

650V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

900V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

M3S 1200V SiC MOSFETs

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

650V SiC Diodes

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Diodes

onsemi's 1200 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

1700V SiC Diodes

onsemi‘s 1700 V SiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

SiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Isolated High Current Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Power Modules and SiC Hybrid Modules

Features

1. Optimized for superior performance
2. Lower thermal resistance than discrete devices
3. Easy to mount packages to fit industry standard pinouts

IGBTs

onsemi’s IGBTs offer optimum performance by balancing VCE(sat) and Eoff losses and controllable turnoff Vce overshoot. They also offer maximum reliability and performance from positive temperature co-efficient, low saturation voltage (VCE(sat)), very low switching and conduction losses, and fast switching. They are well suited for high performance power conversion applications and are engineered and qualified for automotive and industrial applications.

Galvanic Isolated Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Current Sense Amplifiers

Current sense amplifiers provide critical information that can assist in the safety and diagnostic functions of a system by monitoring current consumption. They integrate external resistors for a higher-accuracy, smaller footprint, to support standalone op-amps.

Op-Amps: Voltage & Current Sense

CMOS amplifiers offer rail-to-rail operation, which gives a wider dynamic range. Varying system requirements, and a range from 270 kHz to 10 MHz gives system designers flexibility in amplifier selection. They are also available in several space-saving packages, meeting both power and space constraints for modern system designs.

Voltage Regulators (LDO)

Linear Regulators (LDO) provide an optimum solution for low power, space conscious and low noise design requirements. The simplicity of design and few external components make them easy to integrate into the final product. This broad portfolio features high PSRR, low noise, low quiescent current (Iq), low dropout and wide input voltage range. As a market leader, we provide parts that offer industries best performance with a robust design and high-quality manufacturing. Package options include the smallest size in the industry to the larger power packages providing an ideal solution for automotive, industrial, and consumer applications.

AC-DC, DC-DC Regulators/Converters

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

650V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

900V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

M3S 1200V SiC MOSFETs

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

650V SiC Diodes

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Diodes

onsemi's 1200 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

1700V SiC Diodes

onsemi‘s 1700 V SiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

SiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Isolated High Current Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Power Modules and SiC Hybrid Modules

650V FS4 IGBTs

onsemi’s IGBTs offer optimum performance by balancing VCE(sat) and Eoff losses and controllable turnoff Vce overshoot. They also offer maximum reliability and performance from positive temperature co-efficient, low saturation voltage (VCE(sat)), very low switching and conduction losses, and fast switching. They are well suited for high performance power conversion applications and are engineered and qualified for automotive and industrial applications.

Galvanic Isolated Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

AC-DC, DC-DC Regulators/Converters

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

CAN

The Wired Transceivers from onsemi are ideally suited to In-Vehicle Networking, Industrial Networking, De-centralized Door Electronic Systems, Body Control Units (BCUs), Home, Building, and Process Automation, Environmental Monitoring and Smart Energy applications. The portfolio also includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive industry applications.

BLE

Enabled with Bluetooth® Low Energy wireless connectivity, the RSL15 addresses the growing demand of connected industrial applications for security without sacrificing power consumption.

Thermal Management Controllers

650V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

900V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

M3S 1200V SiC MOSFETs

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

650V SiC Diodes

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Diodes

onsemi's 1200 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

1700V SiC Diodes

onsemi‘s 1700 V SiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

SiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Isolated High Current Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Power Modules and SiC Hybrid Modules

CAN

The Wired Transceivers from onsemi are ideally suited to In-Vehicle Networking, Industrial Networking, De-centralized Door Electronic Systems, Body Control Units (BCUs), Home, Building, and Process Automation, Environmental Monitoring and Smart Energy applications. The portfolio also includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive industry applications.

BLE

Enabled with Bluetooth® Low Energy wireless connectivity, the RSL15 addresses the growing demand of connected industrial applications for security without sacrificing power consumption.

Galvanic Isolated Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Digital Isolators

Digital Isolators from onsemi use a high frequency modulated signal to transmit high speed digital data across a capacitive isolation barrier. The signal is then demodulated on the other side of the barrier, creating a high voltage isolated data transceiver. By using digital technology (eg. Manchester Encoding/Decoding, Digital parameters tracking) the Digital Isolator is able to maintain consistent performance across a wide temperature range and over the operational lifetime of the part.

AC/DC - DC/DC Regulators

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

1. Offline switching controllers; including fixed-frequency flyback & forward PWM controllers, and current mode and voltage mode controllers.
2. Offline, switching regulators, including current mode, voltage mode, and gated oscillator devices.
3. Variable CRM, CCM, and DCM power factor controllers that enable power factor correction.
4. Secondary side, synchronous rectification controllers.
5. Current mode and voltage mode dc-dc controllers for dc-dc power conversion circuits.

AC/DC - DC/DC Controllers

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

1. Offline switching controllers; including fixed-frequency flyback & forward PWM controllers, and current mode and voltage mode controllers.
2. Offline, switching regulators, including current mode, voltage mode, and gated oscillator devices.
3. Variable CRM, CCM, and DCM power factor controllers that enable power factor correction.
4. Secondary side, synchronous rectification controllers.
5. Current mode and voltage mode dc-dc controllers for dc-dc power conversion circuits.

DC/DC Converters