The isolation technology used on the Si826x is based on patented inventions. This block diagram shows the components for the isolation signal path. The isolation provides a withstand rating of 5kVrms. Silicon Labs’ isolation is purely CMOS based and uses silicon dioxide as a dielectric. Silicon dioxide is highly effective in this capacity because of its wide availability, high intrinsic breakdown of greater than 500 V/µm, and resistance to environmental factors. Signals cross the isolation barrier through a pair of differential capacitors. The differential signaling, along with the small size of the capacitors, ensures that the isolation achieves good EMI and reduces emissions. Low input to output parasitic capacitance means that the devices have high common mode immunity. The Si826x isolation fully meets the requirements for reinforced IEC60747-5-2 certification, including protection from surges up to 10 kV. The benefits of this technology, compared to optical technology are listed in the table.