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With its size advantage and the superior conductivity of the gallium nitride, the distanced needed to block voltage is 10 times less for GaN FETs compared to silicon MOSFETs. In this design two of EPCs eGaN FETs fit into the same PCB area as 5 x 6 silicon PQFN allowing for industry best power densities.
PTM Published on: 2015-08-24
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