ROHM Semiconductor

4th Generation Silicon Carbide SiC MOSFETs

ROHM's SiC MOSFETs feature a superior breakdown voltage that can withstand higher voltages, enabling compact system designs

Image of ROHM’s 4th Generation Silicon Carbide SCT MOSFETsROHM's 4th generation SCT4xxx series MOSFETs are revolutionary silicon carbide (SiC) power devices designed to deliver unparalleled efficiency and performance in demanding applications. Leveraging the inherent advantages of SiC technology, these MOSFETs offer significant benefits over traditional silicon MOSFETs. They feature a superior breakdown voltage that can withstand higher voltages, enabling compact system designs. They have ultra-low on-resistance (RDS(ON)) that reduces conduction loss and improves energy efficiency, along with high-speed switching, which enables faster switching frequencies and minimizes switching loss. These MOSFETs have exceptional thermal performance and operate at higher temperatures for increased system reliability.

Features
  • Breakdown voltage range: 650 V to 1700 V
  • Drain current range: 3.7 A to 70 A
  • Low RDS(ON)
  • High-speed switching
  • Superior thermal conductivity
  • TO-247 package
  • RoHS compliant
Applications
  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) chargers
  • Induction heating equipment
  • Motor drives
  • Trains
  • Wind power converters
  • Data center power supplies
  • Industrial automation equipment
  • Welding equipment
  • Battery chargers
  • High-performance audio amplifiers
  • Aircraft power systems

SiC MOSFETs

KuvaManufacturer Part NumberKuvausSaatavana oleva määrä HintaNäytä tiedot
SICFET N-CH 1200V 17A TO247NSCT3160KLGC11SICFET N-CH 1200V 17A TO247N75 - Immediate$5.76Näytä tiedot
SICFET N-CH 650V 39A TO247NSCT3060ALGC11SICFET N-CH 650V 39A TO247N167 - Immediate$13.17Näytä tiedot
SICFET N-CH 650V 70A TO247NSCT3030ALGC11SICFET N-CH 650V 70A TO247N4093 - Immediate$21.89Näytä tiedot
SICFET N-CH 1200V 55A TO247NSCT3040KLGC11SICFET N-CH 1200V 55A TO247N661 - Immediate$33.53Näytä tiedot
SICFET N-CH 1200V 95A TO247NSCT3022KLGC11SICFET N-CH 1200V 95A TO247N198 - Immediate$44.59Näytä tiedot
SICFET N-CH 650V 93A TO247NSCT3022ALGC11SICFET N-CH 650V 93A TO247N450 - Immediate$37.89Näytä tiedot
SICFET N-CH 1200V 72A TO247NSCT3030KLGC11SICFET N-CH 1200V 72A TO247N253 - Immediate$51.76Näytä tiedot
SICFET N-CH 1700V 4A TO268SCT2H12NYTBSICFET N-CH 1700V 4A TO26812 - Immediate$6.18Näytä tiedot
SICFET N-CH 1700V 3.7A TO3PFMSCT2H12NZGC11SICFET N-CH 1700V 3.7A TO3PFM621 - Immediate$5.91Näytä tiedot
SICFET N-CH 650V 21A TO247NSCT3120ALGC11SICFET N-CH 650V 21A TO247N3858 - Immediate$8.34Näytä tiedot
1200V, 10A, THD, SILICON-CARBIDESCT2450KEGC111200V, 10A, THD, SILICON-CARBIDE503 - Immediate$10.05Näytä tiedot
SICFET N-CH 650V 30A TO247NSCT3080ALGC11SICFET N-CH 650V 30A TO247N549 - Immediate$6.04Näytä tiedot
1200V, 62M, 3-PIN THD, TRENCH-STSCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-ST4706 - Immediate$10.77Näytä tiedot
SICFET N-CH 1200V 31A TO247-4LSCT3080KRC14SICFET N-CH 1200V 31A TO247-4L130 - Immediate$15.25Näytä tiedot
1200V, 40A, 7-PIN SMD, TRENCH-STSCT4036KW7TL1200V, 40A, 7-PIN SMD, TRENCH-ST244 - Immediate$13.78Näytä tiedot
750V, 26M, 4-PIN THD, TRENCH-STRSCT4026DRC15750V, 26M, 4-PIN THD, TRENCH-STR3424 - Immediate$15.87Näytä tiedot
1200V, 36M, 4-PIN THD, TRENCH-STSCT4036KRC151200V, 36M, 4-PIN THD, TRENCH-ST4526 - Immediate$16.12Näytä tiedot
1200V, 36M, 3-PIN THD, TRENCH-STSCT4036KEC111200V, 36M, 3-PIN THD, TRENCH-ST4667 - Immediate$16.13Näytä tiedot
1200V, 43A, 4-PIN THD, TRENCH-STSCT4036KRHRC151200V, 43A, 4-PIN THD, TRENCH-ST506 - Immediate$17.12Näytä tiedot
750V, 98A, 7-PIN SMD, TRENCH-STRSCT4013DW7TL750V, 98A, 7-PIN SMD, TRENCH-STR1085 - Immediate$23.93Näytä tiedot
Published: 2024-03-19

Related Videos

ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look
ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look

Publish Date: 2023-09-20

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

Related Product Highlight

4th Generation SiC MOSFETs ROHM's 4th generation SiC MOSFETs feature low switching loss and support for 15 V gate-source voltage that contributes to device power savings.
Industrial Power Solutions ROHM’s reliable portfolio of power solutions includes a variety of applications within the industrial sector from SiC MOSFETs and gate drivers to IPMs and shunt resistors. Learn more at DigiKey today.
7-Pin SiC MOSFETs ROHM Semiconductor extends its portfolio of discrete SiC MOSFETs with devices now available in the TO-263-7L SMD package for faster switching and lower losses.

Related Articles and Blogs

Häviöiden vähentäminen, hyötysuhteen parantaminen ja lämpötila-alueen laajentaminen suurtehosovelluksissa Suunnittelijat voivat käyttää 4. sukupolven SiC MOSFET ‑transistoreja hyötysuhteen parantamiseen, kustannusten vähentämiseen sekä suurjännitteisten ja suurivirtaisten ohjauspiirien koon pienentämiseen.
Leveän energiaraon puolijohteet muuttavat kuljetusalaa Koko liikennesektori on käymässä läpi valtavaa murrosta, johon kuuluu uusia ratkaisuja sähkö- ja hybridiautoja ja puhtaampaa joukkoliikennettä varten.
Leveän energiaraon puolijohteet ilmailu- ja satelliittisovelluksissa Leveän energiaraon puolijohteilla on useita etuja tehonmuunnossa, kuten parempi tehotiheys ja hyötysuhde sekä pienempi järjestelmän koko ja paino.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
4th Generation SiC MOSFETs This presentation will provide a brief overview of ROHM’s latest SiC trench MOSFETs and their advantages for power electronics applications.