Osan RPI-129B tekniset tiedot yritykseltä Rohm Semiconductor

iature DIP type I Applications DSClDigital steal camera) DVClDigilal video camera) Digital handy phone I Fealures l) Ultraminiamre DIP type 2) Gap la2mma as as in IE 2n 2; n n in DianCE downy Fig.1 Relauve uulpul cunenlvs. distance (1) Fig.2 Forward current lauou a z a an S \ a su E \ a «a \ 8 g 2n \ 3 a 0 § 0 a mi m is an 25 n 25 in 75 m DlSTANCE dlmml AMEIENY TEMVEHATURE Tal‘Cl Fig.4 Relalwe Dulput current vs, Flgf) Power dlSSlpallun /colleclm pawev F|g.6 Relative umpul vs. ambient distance (In dissipallan vs amblenllempemlure Iempelzluve
RPI-129B
RPI-129B
Photointerrupter, Ultraminiature DIP type
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Features
1) Ultraminiature DIP type.
2) Gap 1.2mm.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Fig.1 Relative output current vs.
distance ( )
DISTANCE : d (mm)
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.5 1.0 1.5 2.0 2.5
RELATIVE COLLECTOR CURRENT : Ic (%)
Fig.4 Relative output current vs.
distance ( )
Fig.2 Forward current falloff
−20 0 20 40 60 80 100
10
50
40
30
20
0
AMBIENT TEMPERATURE : Ta (°C)
FORWARD CURRENT : IF (mA)
Fig.6 Relative output vs. ambient
temperature
RELATIVE COLLECTOR CURRENT : Ic (
%
)
AMBIENT TEMPERATURE : Ta (°C)
−25 0 25 50 75 100
100
80
60
40
20
0
VCE=5V
IF=20mA
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.5 1.0 1.5 2.0
DISTANCE : d (mm)
RELATIVE COLLECTOR CURRENT : Ic
(% )
Fig.3 Forward current vs. forward
voltage
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
0
10
20
30
40
50
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8
75°C
50°C
25°C
0°C
−25°C
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : PD/PC (mW)
AMBIENT TEMPERATURE : Ta (°C)
−20 0 40 60 8020 100
0
20
40
60
80
100
120
PD PC
Parameter
Cut-off frequency
∗ Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
A
B
Rise time
Fall time
Symbol
VF
IR
ICEO
λ
P
λ
P
IC
fC
IC
VCE(sat)
tr
tf
Min.
−
−
−
−
0.95
0.45
0.95
−
−
Typ.
1.3
−
−
800
−
−
−
−
10
Max.
1.6
10
0.5
−
4.95
2.33
4.95
0.4
−
Unit
VI
F=50mA
IF=50mA
VR=5V
VCE=10V
−
−
VCE=5V, IF=20mA
IF=20mA, IC=0.1mA
VCC=5V, IF=20mA, RL=100Ω
VCE=5V, IF=20mA
µA
µA
nm
mA
mA
V
µs
−10 −µs
−1−MHz
−950 −nm
Conditions
Maximum sensitivity wavelength
λ
P−800 −nm
∗ This product is not designed to be protected against electromagnetic wave.
VCC=5V, IC=1mA, RL=100Ω
tr tf
Response time −10 −µs
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor Infrared
light
emitter
diode
Collector
rank
Parameter Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
−25 to +85
−30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input (LED)
Output
photo-
transistor
()
(DLLE(TDR cunnzm mm n s In 15 m 25 FORWARD CURRENY Hm) Fig 7 Collettercurrentus forward current "u 2 o s s In COLLECTOR m EMIYYER anAGE wiv) Fig.10 Output chavaderistics 1 as) 1 m 15 n 25 so 75 m leEUDR tumur tune) mum rmmruns mm) Fig 5 Response time vs. Fig 9 DarKcurrentvs coliecmr current ambienttemperature We 10% u Deiayume i, Rise nrne [lime 1m oummcuwemm use mm mi m We ofpeakmmem it Fau nrne (time toroumuttunen: m tau mm 9% w 10% at peak tunenu Fig 11 Response time measurementcircuit
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td :
tr :
tf :
Fig.11 Response time measurement circuit
tdtrtf
10%
90%
RL
VCCInput
Input
Output
Output
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Fig.10 Output characteristics
4861020
0
2
1
3
4
5
6
7
IF=30mA
25mA
20mA
15mA
10mA
5mA
Fig.8 Response time vs.
collector current
COLLECTOR CURRENT : IC (mA)
100.05 0.1 1
1
10
100
RESPONSE TIME : tr (µs)
RL=100Ω
RL=1kΩ
RL=500Ω
Fig.9 Dark current vs.
ambient temperature
AMBIENT TEMPERATURE : Ta (°C)
DARK CURRENT : ICEO (nA)
0 25 50 75 100−25
0.1
1
10
100
1000
VCE=20V
VCE=10V
VCE=30V
Fig.7 Collector current vs.
forward current
COLLECTOR CURRENT : IC (mA)
FORWARD CURRENT : IF (mA)
0 5 10 15 20 25
0
1
2
3
4
5
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
1
0. 7
A
A
(4-0.3) (4-0.35)
1.6±0.1
(4-0.2)
3.3±0.1
(4-0.6)
3.6±0.15
1.2±0.15
(2-0.1)
(2-0.2)
(0.75)
0.75±0.1
C0.2
Optical center
Cross-section A-A
0.5±0.1
2.8±0.1
2.2±0.1
(0.15)
(2.75)
2-R0.3
0.15
2.6±0.1
C0.4
0.3
1.5±0.3
0.4
0.5
(2)
Internal connection diagram
Collector Anode
1.6±0.1
2-0.35
Emitter Cathode
ROHI'I'I SEMICONDUCTOR
R0039
A
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