Asetukset
Nopea toimitus
Ilmainen toimitus
Incoterms
Maksutyypit
Markkinapaikan tuote
Slide 1
Slide 2
Slide 3
Slide 4
Slide 5
Slide 6
Slide 7
Slide 8
Slide 9
Slide 10
Slide 11
Slide 12
Slide 13
Slide 14
Slide 15
Slide 16
Slide 17
Slide 18
Slide 19
Slide 20
Slide 21
Slide 22
Slide 23
Slide 24
Slide 25
Product List
Taking a closer look at the switching transistions clearly shows the reduction of switching loss between the SiC FET solution and the IGBT solution with both operating at 25 kHz. The lost turn-off energy is reduced by 75% by using the SiC FET.
PTM Published on: 2016-05-06
