RY7P250BM N-Channel MOSFET
ROHM Semiconductor power MOSFET is ideal for hot swap controller applications thanks to its robust design
The ROHM Semiconductor RY7P250BM is an N-channel power MOSFET designed with low on-resistance and housed in a high-power DFN8080-8S package. This component is ideal for demanding applications, particularly in hot swap controllers (HSC), due to its robust design and wide safe operating area (SOA).
- Low on-resistance
- High-power package (DFN8080)
- Pb-free plating and RoHS compliant
- Halogen-free
- 100% RG and UIS tested
- Wide SOA
- 48 V AI server systems and power supply hot-swap circuits in datacenters
- 48 V industrial equipment power systems (forklifts, power tools, robots, and fan motors)
- Battery-powered industrial equipment such as AGVs (automated guided vehicles)
- UPS and emergency power systems (battery backup units)
RY7P250BM N-Channel FET
| Kuva | Manufacturer Part Number | Kuvaus | FET-tyyppi | Teknologia | Jännite nielusta lähteeseen (Vdss) | Saatavana oleva määrä | Hinta | Näytä tiedot | |
|---|---|---|---|---|---|---|---|---|---|
![]() | ![]() | RY7P250BMTBC | NCH 100V 300A DFN8080-8S WIDE | N-kanavatyyppi | MOSFET (metallioksidi) | 100 V | 0 - Immediate | $7.21 | Näytä tiedot |





