Cascode GaN FETs
Nexperia GaN FETs offer performance, efficiency, and reliability of power systems
Nexperia cascode GaN FETs offer high power density, performance, and switching frequency. The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability, which are vital in next-generation power systems, such as Industry 4.0 and renewable energy applications. The unique cascode GaN FET solution facilitates easy driving of devices using well-known Si MOSFET gate drivers. They deliver unmatched high junction temperature [Tj (max) = +175°C], design freedom, and improved reliability of power systems.
Cascode GaN FETs
Kuva | Manufacturer Part Number | Kuvaus | Saatavana oleva määrä | Hinta | Näytä tiedot | |
---|---|---|---|---|---|---|
![]() | ![]() | GAN041-650WSBQ | GAN041-650WSB/SOT429/TO-247 | 304 - Immediate | $14.92 | Näytä tiedot |
![]() | ![]() | GAN063-650WSAQ | GANFET N-CH 650V 34.5A TO247-3 | 536 - Immediate | $24.07 | Näytä tiedot |
![]() | ![]() | GAN039-650NBBHP | 650 V, 33 MOHM GALLIUM NITRIDE ( | 847 - Immediate | $15.15 | Näytä tiedot |
![]() | ![]() | GAN111-650WSBQ | GAN111-650WSB/SOT429/TO-247 | 151 - Immediate | $11.89 | Näytä tiedot |
![]() | ![]() | GAN039-650NTBZ | 650 V, 33 MOHM GALLIUM NITRIDE ( | 0 - Immediate | $10.21 | Näytä tiedot |
![]() | ![]() | GAN039-650NTBJ | GAN CASCODE FETS | 723 - Immediate | $15.15 | Näytä tiedot |