200 V OptiMOS™ 6 Power MOSFET

Infineon's OptiMOS 6 200 V MOSFETs address the need for high power density, efficiency, and reliability by offering a 42% R_DS(on) reduction at room temperature and as much as 53% reduction at +175°C compared to the previous generation. The reduced Q_rr and improved capacitance linearity enables improved switching performance. In effect, conduction and switching losses can be reduced without compromising EMI. The technology features improved safe operating area (SOA) to increase the MOSFET current handling in protection switch applications. At the same time, design optimizations and production precision make the reliable, high-performing technology the ideal choice for paralleling. Multiple package options are available including PQFN 3.3 x 3.3, SuperSO8, D²PAK 3-pin, D²PAK 7-pin, TO-leadless, and TO-220. Compared to the previous technology, OptiMOS 6 enables significant performance benefits, such as low conduction and switching losses, improved EMI, less required parallelization, and better current sharing when paralleling.

The KIT_LGPWR_BOM015 power board module utilizing the OptiMOS 6 power MOSFET 200 V in the D²PAK package represents the power building block of the low voltage drive (LVD) scalable power demo board platform. It serves as a single half-bridge with power and gate drive interconnections, enabling easy buildup of any half-bridge-based power topology.

Variations of the power board employing Infineon’s power MOSFET family OptiMOS in the D²PAK, D²PAK-7, and the TO-leadless packages demonstrate power MOSFET performance in terms of parallelization and thermal behavior.