EPC2218A and EPC2204A GaN FETs
EPC's GaN FETs are ideal for vehicle electronics and advanced autonomy
EPC's EPC2218A 80 V, 3.2 mΩ, 231 A pulsed current GaN FET and EPC2204A 80 V, 6 mΩ, 125 A pulsed current GaN FET offer designers a significantly smaller and more efficient solution than silicon MOSFETs for automotive 48 V to 12 V DC/DC conversion, infotainment, and lidar for autonomous driving.
Lower gate charges (QGD) and zero reverse recovery (QRR) losses allow high-frequency operation of 1 MHz and beyond. Combined with high efficiency in a tiny footprint, these factors enable state-of-the-art power density.
- 48 V automotive DC/DC conversion
- Mild hybrid electric vehicles
- Infotainment
- Automotive lidar
- Autonomous vehicles
- eMobility
EPC2218A and EPC2204A GaN FETs
Kuva | Manufacturer Part Number | Kuvaus | Virta - jatkuva nielu (Id) @ 25°C | Vgs(th) (maks.) @ Id | Rds päällä (maks.) @ Id, Vgs | Saatavana oleva määrä | Hinta | Näytä tiedot | |
---|---|---|---|---|---|---|---|---|---|
![]() | ![]() | EPC2204A | TRANS GAN 80V .006OHM AECQ101 | 29A (Ta) | 2,5V @ 4mA | 6mOhm @ 16A, 5V | 16611 - Immediate | $3.17 | Näytä tiedot |
![]() | ![]() | EPC2218A | TRANS GAN 80V .0032OHM AECQ101 | 60A (Ta) | 2,5V @ 7mA | 3,2mOhm @ 25A, 5V | 19393 - Immediate | $5.33 | Näytä tiedot |