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EPC2111 30 V eGaN® Transistor Half-Bridge
EPC's EPC2111 enhancement-mode GaN power transistor half-bridge increases both efficiency and power density
EPC’s 30 V eGaN half-bridge, EPC2111, integrates two eGaN power FETs into a single device increasing both efficiency and power density while reducing assembly costs to the end user’s power conversion systems. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance and is only 3.5 mm x 1.5 mm for increased power density. A primary application for this device is for notebook and tablet computing. The high-frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next-generation mobile computing.
Features
- High-frequency capability
- Monolithic integration eliminates interconnect inductances for higher efficiency at a higher frequency
- High efficiency
- Lower conduction and switching losses, zero reverse recovery losses
- Small footprint
- Low inductance, extremely small, 3.5 mm x 1.55 mm BGA surface-mount passivated die
Applications
- High-frequency DC/DC power conversion
- Notebook and tablet computing
EPC2111 30 V eGaN® Transistor Half-Bridge
| Kuva | Manufacturer Part Number | Kuvaus | Virta - jatkuva nielu (Id) @ 25°C | Rds päällä (maks.) @ Id, Vgs | Vgs(th) (maks.) @ Id | Saatavana oleva määrä | Hinta | Näytä tiedot | |
|---|---|---|---|---|---|---|---|---|---|
 |  | EPC2111 | MOSFET 2N-CH 30V 16A DIE | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2,5V @ 2mA, 2,5V @ 5mA | 18182 - Immediate | $3.72 | Näytä tiedot |
Evaluation Boards
| Kuva | Manufacturer Part Number | Kuvaus | Saatavana oleva määrä | Hinta | Näytä tiedot | |
|---|---|---|---|---|---|---|
|  | EPC9086 | EVAL BOARD FOR EPC2111 | 19 - Immediate | $169.46 | Näytä tiedot |
|  | EPC9204 | EVAL BOARD FOR EPC2111 | 0 - Immediate | $112.14 | Näytä tiedot |
Published: 2019-08-16
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