The last topic will be a discussion on driving the Silicon Carbide MOSFET. Shown here is the ST Microelectronics TD350E single channel gate driver for IGBTs and MOSFETs. Due to its limited drive source/sink current capability, one can simply add an external low cost push/pull network to increase drive current capability. Recommended gate drive currents are between 3 to 5 A source and sink. Note the +20 V and -4 V drive levels. In applications with high dv/dt, it is advisable to drive the SiC FET off with a small negative voltage. This protects against the device being inadvertently turned on by energy coupled through the drain to gate capacitance of the device. Absolute maximum ratings on the gate of the SCT30N120 are +25 V and -10 V.