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Comparing the IGBT solution operating at 25 kHz with the SiC FET solution operating at 100 kHz, it is seen that similar performance can be acheived with the SiC at 4 times the operating frequency. Even higher efficiencies could be obtained using synchronous rectification in place of the freewheeling diode in the boost converter.
PTM Published on: 2016-05-06
Finland