Name: SISS80DN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISS80DN-T1-GE3TR-ND
Price: 2.9367 EUR
Availability: InStock

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SISS80DN-T1-GE3
DigiKey Part Number	742-SISS80DN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISS80DN-T1-GE3CT-ND - Cut Tape (CT) 742-SISS80DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS80DN-T1-GE3
Description	MOSFET N-CH 20V 58.3A/210A PPAK
Manufacturer Standard Lead Time	19 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 58.3A (Ta), 210A (Tc) 5W (Ta), 65W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) +12V, -8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V
Part Status Active	Power Dissipation (Max) 5W (Ta), 65W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 58.3A (Ta), 210A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V	Base Product Number SISS80
Rds On (Max) @ Id, Vgs 0.92mOhm @ 10A, 10V