Name: SIR662DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR662DP-T1-GE3TR-ND
Price: 3.15005 EUR
Availability: InStock

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SIR662DP-T1-GE3
DigiKey Part Number	SIR662DP-T1-GE3TR-ND - Tape & Reel (TR) SIR662DP-T1-GE3CT-ND - Cut Tape (CT) SIR662DP-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIR662DP-T1-GE3
Description	MOSFET N-CH 60V 60A PPAK SO-8
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SIR662DP-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 4365 pF @ 30 V
Part Status Active	Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C 60A (Tc)	Package / Case PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SIR662
Rds On (Max) @ Id, Vgs 2.7mOhm @ 20A, 10V