N-Channel 650 V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
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SIHU6N65E-GE3

DigiKey Part Number
SIHU6N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHU6N65E-GE3
Description
MOSFET N-CH 650V 7A IPAK
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
820 pF @ 100 V
FET Type
Power Dissipation (Max)
78W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Available To Order
Check Lead Time
This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
All prices are in EUR
Tube
QuantityUnit PriceExt Price
3 000€0.59562€1,786.86
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€0.59562
Unit Price with VAT:€0.74750