TO-263-3
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TO-263-3
TO-263-3

SIHB33N60E-GE3

DigiKey Part Number
SIHB33N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB33N60E-GE3
Description
MOSFET N-CH 600V 33A D2PAK
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3508 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB33
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In-Stock: 1 797
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€4.98000€4.98
10€3.94600€39.46
100€2.86630€286.63
500€2.40632€1,203.16
1 000€2.38040€2,380.40
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€4.98000
Unit Price with VAT:€6.24990
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