Name: SIDR680ADP-T1-RE3
Brand: Vishay Siliconix
SKU: 742-SIDR680ADP-T1-RE3TR-ND
Price: 3.45125 EUR
Availability: OutOfStock

SIDR680ADP-T1-RE3 is out of stock and can be placed on backorder.

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Rohm Semiconductor

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SIDR680ADP-T1-RE3
DigiKey Part Number	742-SIDR680ADP-T1-RE3TR-ND - Tape & Reel (TR) 742-SIDR680ADP-T1-RE3CT-ND - Cut Tape (CT) 742-SIDR680ADP-T1-RE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIDR680ADP-T1-RE3
Description	MOSFET N-CH 80V 30.7A/137A PPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 30.7A (Ta), 137A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Datasheet	Datasheet
EDA/CAD Models	SIDR680ADP-T1-RE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	30.7A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4415 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8
Base Product Number	SIDR680