Name: SIDR5802EP-T1-RE3
Brand: Vishay Siliconix
SKU: 742-SIDR5802EP-T1-RE3TR-ND
Price: 4.3674 EUR
Availability: OutOfStock

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SIDR5802EP-T1-RE3
DigiKey Part Number	742-SIDR5802EP-T1-RE3TR-ND - Tape & Reel (TR) 742-SIDR5802EP-T1-RE3CT-ND - Cut Tape (CT) 742-SIDR5802EP-T1-RE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIDR5802EP-T1-RE3
Description	N-CHANNEL 80 V (D-S) 175C MOSFET
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 34.2A (Ta), 153A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC
Datasheet	Datasheet
EDA/CAD Models	SIDR5802EP-T1-RE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Series TrenchFET® Gen V	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 40 V
Part Status Active	Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 80 V	Supplier Device Package PowerPAK® SO-8DC
Current - Continuous Drain (Id) @ 25°C 34.2A (Ta), 153A (Tc)	Package / Case PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V	Base Product Number SIDR5802
Rds On (Max) @ Id, Vgs 2.9mOhm @ 20A, 10V