Name: TPW1R306PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPW1R306PLL1QTR-ND
Price: 4.1666 EUR
Availability: OutOfStock

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TPW1R306PL,L1Q
DigiKey Part Number	TPW1R306PLL1QTR-ND - Tape & Reel (TR) TPW1R306PLL1QCT-ND - Cut Tape (CT) TPW1R306PLL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPW1R306PL,L1Q
Description	MOSFET N-CH 60V 260A 8DSOP
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Datasheet	Datasheet
EDA/CAD Models	TPW1R306PL,L1Q Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Series U-MOSIX-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V
Part Status Active	Power Dissipation (Max) 960mW (Ta), 170W (Tc)
FET Type N-Channel	Operating Temperature 175°C
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package 8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C 260A (Tc)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number TPW1R306
Rds On (Max) @ Id, Vgs 1.29mOhm @ 50A, 10V