Name: TK2R9E10PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK2R9E10PL,S1X-ND
Price: 4.80665 EUR
Availability: InStock

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TK2R9E10PL,S1X
DigiKey Part Number	264-TK2R9E10PL,S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK2R9E10PL,S1X
Description	PB-F POWER MOSFET TRANSISTOR TO-
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 100A (Ta) 306W (Tc) Through Hole TO-220
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 2.9mOhm @ 50A, 10V
Mfr Toshiba Semiconductor and Storage	Vgs(th) (Max) @ Id 2.5V @ 1mA
Series U-MOSIX-H	Gate Charge (Qg) (Max) @ Vgs 161 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 50 V
FET Type N-Channel	Power Dissipation (Max) 306W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 100 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 100A (Ta)	Supplier Device Package TO-220
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-220-3

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