Name: TK17E65W,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK17E65WS1X-ND
Price: 5.1455 EUR
Availability: InStock

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TK17E65W,S1X
cms-digikey-product-number	TK17E65WS1X-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK17E65W,S1X
cms-description	MOSFET N-CH 650V 17.3A TO220
cms-standard-lead-time	16 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-220
Datasheet	Datasheet
cms-eda-cad-models	TK17E65W,S1X Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK17E65