Name: TJ8S06M3L(T6L1,NQ)
Brand: Toshiba Semiconductor and Storage
SKU: 264-TJ8S06M3L(T6L1,NQ)TR-ND
Price: 1.9076 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TJ8S06M3L(T6L1,NQ)
DigiKey Part Number	264-TJ8S06M3L(T6L1,NQ)TR-ND - Tape & Reel (TR) 264-TJ8S06M3L(T6L1,NQ)CT-ND - Cut Tape (CT) 264-TJ8S06M3L(T6L1,NQ)DKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TJ8S06M3L(T6L1,NQ)
Description	MOSFET P-CH 60V 8A DPAK
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	P-Channel 60 V 8A (Ta) 27W (Tc) Surface Mount DPAK+
Datasheet	Datasheet
EDA/CAD Models	TJ8S06M3L(T6L1,NQ) Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	TJ8S06