2SC4134S-E is Obsolete and no longer manufactured.
Available Substitutes:

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Toshiba Semiconductor and Storage
In Stock: 9 998
Unit Price: €0.84000
Datasheet
Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 800 mW Through Hole TP
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2SC4134S-E

DigiKey Part Number
2SC4134S-E-ND
Manufacturer
Manufacturer Product Number
2SC4134S-E
Description
TRANS NPN 100V 1A TP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 800 mW Through Hole TP
Datasheet
 Datasheet
EDA/CAD Models
2SC4134S-E Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Mfr
Power - Max
800 mW
Packaging
Bulk
Frequency - Transition
120MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
1 A
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max)
100 V
Supplier Device Package
TP
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
TTC004B,QToshiba Semiconductor and Storage9 998TTC004BQ-ND€0.84000Similar
Obsolete
Marketplace Stock: 13 500 View Now
This product is no longer manufactured. View Substitutes
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13 500In Stock
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