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STI24NM65N | |
|---|---|
cms-digikey-product-number | STI24NM65N-ND |
cms-manufacturer | |
cms-manufacturer-product-number | STI24NM65N |
cms-description | MOSFET N-CH 650V 19A I2PAK |
cms-customer-reference | |
cms-detailed-description | N-Channel 650 V 19A (Tc) 160W (Tc) Through Hole I2PAK |
Datasheet | Datasheet |
cms-product-attributes
cms-type | cms-description | cms-select-all |
|---|---|---|
cms-category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Obsolete | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 160W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | I2PAK | |
Package / Case | ||
Base Product Number |
Obsolete
Finland