Name: NVH4L022N120M3S
Brand: onsemi
SKU: 5556-NVH4L022N120M3S-ND
Price: 33.72185 EUR
Availability: InStock

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NVH4L022N120M3S
cms-digikey-product-number	5556-NVH4L022N120M3S-ND
cms-manufacturer	onsemi
cms-manufacturer-product-number	NVH4L022N120M3S
cms-description	SIC MOS TO247-4L 22MOHM 1200V
cms-standard-lead-time	8 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet
cms-eda-cad-models	NVH4L022N120M3S Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id	4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3175 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	352W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4