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Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N5551G

DigiKey Part Number
2N5551GOS-ND
Manufacturer
Manufacturer Product Number
2N5551G
Description
TRANS NPN 160V 0.6A TO92
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Datasheet
 Datasheet
EDA/CAD Models
2N5551G Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Obsolete
Transistor Type
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
300MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92 (TO-226)
Base Product Number
Product Questions and Answers

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Obsolete
Marketplace Stock: 183 540 View Now
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