Name: IXTA1N200P3HV
Brand: IXYS
SKU: IXTA1N200P3HV-ND
Price: 10.4667 EUR
Availability: InStock

cms-photo-disclaimer

IXTA1N200P3HV
cms-digikey-product-number	IXTA1N200P3HV-ND
cms-manufacturer	IXYS
cms-manufacturer-product-number	IXTA1N200P3HV
cms-description	MOSFET N-CH 2000V 1A TO263
cms-standard-lead-time	33 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 2000 V 1A (Tc) 125W (Tc) Surface Mount TO-263AA
Datasheet	Datasheet
cms-eda-cad-models	IXTA1N200P3HV Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	Polar P3™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000 V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	646 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	IXTA1