Name: IPT026N12NM6ATMA1
Brand: Infineon Technologies
SKU: 448-IPT026N12NM6ATMA1TR-ND
Price: 4.90705 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPT026N12NM6ATMA1
DigiKey Part Number	448-IPT026N12NM6ATMA1TR-ND - Tape & Reel (TR) 448-IPT026N12NM6ATMA1CT-ND - Cut Tape (CT) 448-IPT026N12NM6ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPT026N12NM6ATMA1
Description	IPT026N12NM6ATMA1
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 120 V 23A (Ta), 224A (Tc) 3W (Ta), 283W (Tc) Surface Mount PG-HSOF-8-1
Datasheet	Datasheet
EDA/CAD Models	IPT026N12NM6ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 115A, 10V
Vgs(th) (Max) @ Id	3.6V @ 169µA
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 283W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN