Name: IPP022N12NM6AKSA1
Brand: Infineon Technologies
SKU: 448-IPP022N12NM6AKSA1-ND
Price: 7.46725 EUR
Availability: InStock

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IPP022N12NM6AKSA1
DigiKey Part Number	448-IPP022N12NM6AKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP022N12NM6AKSA1
Description	TRENCH >=100V
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 120 V 29A (Ta), 203A (Tc) 3.8W (Ta), 395W (Tc) Through Hole PG-TO220-3-1
Datasheet	Datasheet
EDA/CAD Models	IPP022N12NM6AKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 2.2mOhm @ 100A, 10V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 3.6V @ 275µA
Series OptiMOS™ 6	Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 60 V
FET Type N-Channel	Power Dissipation (Max) 3.8W (Ta), 395W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 120 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 203A (Tc)	Supplier Device Package PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V	Package / Case TO-220-3