Name: IMW120R007M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW120R007M1HXKSA1-ND
Price: 63.8544 EUR
Availability: InStock

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IMW120R007M1HXKSA1
DigiKey Part Number	448-IMW120R007M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW120R007M1HXKSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	54 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 225A (Tc) 750W (Tc) Through Hole PG-TO247-3
Datasheet	Datasheet
EDA/CAD Models	IMW120R007M1HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 9.9mOhm @ 108A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.2V @ 47mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 289 nC @ 18 V
Packaging Tube	Vgs (Max) +20V, -5V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 9170 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 750W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 225A (Tc)	Supplier Device Package PG-TO247-3
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-3