TW070J120B SiC MOSFET

Toshiba’s TW070J120B silicon carbide MOSFET features low (70 mΩ) R_DS(ON) in a TO-3P(N) package.

Power devices are essential components when reducing power consumption in industrial and other electrical equipment. SiC is widely anticipated as a next-generation material for power devices, as it realizes higher voltages and lower loss than silicon. SiC power devices are expected to be used in power-dense applications, including photovoltaic power systems and power management systems for industrial equipment.

Toshiba created a structure that prevents energizing of the PN diode by positioning an SBD in-parallel to the PN diode inside the cell. Current flows through the embedded SBD because its on-state voltage compared is lower than that of the PN diode, suppressing changes in ON resistance and degradation of the MOSFET’s reliability.

MOSFETs with embedded SBDs are already in practical use, but only in high voltages around 3.3 kV. Normally, embedded SBDs cause ON resistance to rise to a level that only high-voltage products can tolerate. Toshiba adjusted various device parameters and found that the ratio of SBD area in a MOSFET is the key for suppressing increased ON resistance. By optimizing the SBD ratio, Toshiba has created a highly reliable 1.2 kV class SiC MOSFET.