C3M™ Planar MOSFET Technology

Cree's MOSFETs come in TO-247 packages with 3, 4, and 7 leads providing a variety of options

Image of Cree Woldspeed's C3M Planar Mosfet TechnologyWolfspeed's advanced SiC MOSFET technology is offered in low-inductance discrete packing. These packages allow engineers to take full advantage of the high-frequency capability of the latest C3M planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. These devices feature low on-resistance combined with a low gate charge, making them ideally suited for three-phase, bridgeless PFC topologies as well as AC/AC converters and chargers.

C3M Planar MOSFET Technology

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET 1200V, 75 MOHM, G3 SICC3M0075120DMOSFET 1200V, 75 MOHM, G3 SIC0View Details
MOSFET N-CH 1200V 30A TO247-4C3M0075120KMOSFET N-CH 1200V 30A TO247-4806 - ImmediateView Details
MOSFET N-CH 1200V 30A D2PAK-7C3M0075120JMOSFET N-CH 1200V 30A D2PAK-72179 - ImmediateView Details
Published: 2019-03-22