BAV70DXV6T(1, 5) Datasheet by onsemi

0N Semiconductorg www.0nsemi.com —H—° —K—°
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6 1Publication Order Number:
BAV70DXV6T1/D
BAV70DXV6,
NSVBAV70DXV6
Common Cathode Monolithic
Dual Switching Diode
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage VR100 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RJA 350
(Note 1) °C/W
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RJA 250
(Note 1) °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
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3
CATHODE
4
ANODE
5
ANODE
Device Package Shipping†
ORDERING INFORMATION
SOT−563
CASE 463A
1
MARKING DIAGRAM
6
CATHODE
ANODE
1
2
ANODE
BAV70DXV6T1
A4 = Specific Device Code
M = Month Code
G= Pb−Free Package
A4 M G
G
1
BAV70DXV6T5G SOT−563
(Pb−Free) 8000 / Tape &
Reel
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSVBAV70DXV6T5G SOT−563
(Pb−Free) 8000 / Tape &
Reel
|___ www.0nsemi.com
BAV70DXV6, NSVBAV70DXV6
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (Note 2)
(I(BR) = 100 Adc) V(BR) 100 − Vdc
Reverse Voltage Leakage Current (Note 2)
(VR = 25 Vdc, TJ = 150°C)
(VR = 100 Vdc)
(VR = 70 Vdc, TJ = 150°C)
IR−
−
−
60
1.0
100
Adc
Diode Capacitance (Note 2)
(VR = 0, f = 1.0 MHz) CD− 1.5 pF
Forward Voltage (Note 2)
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time (Note 2) RL = 100
(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1) trr − 6.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. For each individual diode while second diode is unbiased.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV70DXV6, NSVBAV70DXV6
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3
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
Curves Applicable to Each Anode
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HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A
ISSUE G
DATE 23 SEP 2015
eM
0.08 (0.003) X
b6 5 PL
A
C
SCALE 4:1
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
XX = Specific Device Code
M = Month Code
G= Pb−Free Package
XX MG
D
E
Y
12 3
45
L
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
6
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
GENERIC
MARKING DIAGRAM*
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
4. ANODE
5. CATHODE
6. CATHODE
1
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 8:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1
HE
0.08 0.12 0.18 0.003 0.005 0.007
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−563, 6 LEAD
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1
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