EE-SX198 Datasheet by Omron Electronics Inc-EMC Div

OI'I'IROH
94 EE-SX198 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX198
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•General-purpose model with a 3-mm-wide slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Four, C0.3
Four, 0.5±0.1
Four, 0.25±0.1
Two, C1±0.3
Optical
axis
Cross section BB
Cross section AA
6.5+0.1
2.5±0.1
6.2±0.5
0.5±0.1
8.5±0.1
5±0.1
12.2±0.3
10±0.2
9.2±0.3
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.4 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 5 V
Dark current ID2 nA typ., 200 nA max. VCE = 20 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age
VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 10 V
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 25.
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EE-SX198 Photomicrosensor (Transmissive) 95
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 50 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)