PEMB13,PUMB13 Datasheet by Nexperia USA Inc.

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1. Product profile

1.1 General description

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PEMB13; PUMB13

PNP/PNP resistor-equipped transistors;

R1 = 4.7 k, R2 = 47 k

Rev. 4 — 7 December 2011 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement NPN/NPN

complement Package

configuration

NXP JEITA

PEMB13 SOT666 - PEMD13 PEMH13 ultra small and flat lead

PUMB13 SOT363 SC-88 PUMD13 PUMH13 very small

100 mA output current capability Reduces component count

Built-in bias resistors Reduces pick and place costs

Simplifies circuit design AEC-Q101 qualified

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 3.3 4.7 6.1 k

R2/R1 bias resistor ratio 8 10 12

W W W U U U

Product data sheet Rev. 4 — 7 December 2011 2 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 GND (emitter) TR1

2 input (base) TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 output (collector) TR1

001aab555

6 45

1 32

006aaa212

R1 R2

TR1 TR2

213

Table 4. Ordering information

Type number Package

Name Description Version

PEMB13 - plastic surface-mounted package; 6 leads SOT666

PUMB13 SC-88 plastic surface-mounted package; 6 leads SOT363

Table 5. Marking codes

Type number Marking code[1]

PEMB13 45

PUMB13 B*5

Product data sheet Rev. 4 — 7 December 2011 3 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 5V

VIinput voltage

positive - +5 V

negative - 30 V

IOoutput current - 100 mA

ICM peak collector current single pulse;

tp1ms -100 mA

Ptot total power dissipation Tamb 25 C

PEMB13 (SOT666) [1][2] -200mW

PUMB13 (SOT363) [1] -200mW

Per device

Ptot total power dissipation Tamb 25 C

PEMB13 (SOT666) [1][2] -300mW

PUMB13 (SOT363) [1] -300mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 4 — 7 December 2011 4 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666

Tamb (°C)

-75 17512525 75-25

006aac749

200

100

300

400

Ptot

(mW)

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance from

junction to ambient in free air

PEMB13 (SOT666) [1][2] - - 625 K/W

PUMB13 (SOT363) [1] - - 625 K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air

PEMB13 (SOT666) [1][2] - - 417 K/W

PUMB13 (SOT363) [1] - - 417 K/W

Product data sheet Rev. 4 — 7 December 2011 5 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

FR4 PCB, standard footprint

Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for

PEMB13 (SOT666); typical values

FR4 PCB, standard footprint

Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for

PUMB13 (SOT363); typical values

006aac751

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33

0.2

0.1

0.05

0.02 0.01

006aac750

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33

0.2

0.1

0.05

0.02 0.01

Product data sheet Rev. 4 — 7 December 2011 6 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

7. Characteristics

[1] Characteristics of built-in transistor

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

ICBO collector-base cut-off

current VCB =50 V; IE=0A - - 100 nA

ICEO collector-emitter cut-off

current VCE =30 V; IB=0A - - 1A

VCE =30 V; IB=0A;

Tj=150C--5A

IEBO emitter-base cut-off

current VEB =5V; I

C=0A - - 170 A

hFE DC current gain VCE =5V; I

C=10 mA 100 - -

VCEsat collector-emitter

saturation voltage IC=5mA; I

B=0.25 mA - - 100 mV

VI(off) off-state input voltage VCE =5V; I

C=100 A- 0.6 0.5 V

VI(on) on-state input voltage VCE =0.3 V; IC=5mA 1.3 0.9 - V

R1 bias resistor 1 (input) 3.3 4.7 6.1 k

R2/R1 bias resistor ratio 8 10 12

Cccollector capacitance VCB =10 V; IE=i

e=0A;

f=1MHz --3pF

fTtransition frequency VCE =5V; I

C=10 mA;

f=100MHz

[1] - 180 - MHz

Product data sheet Rev. 4 — 7 December 2011 7 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

VCE =5V

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

IC/IB=20

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

Fig 4. DC current gain as a function of collector

current; typical values Fig 5. Collector-emitter saturation voltage as a

function of collector current; typical values

VCE =0.3 V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

VCE =5V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

Fig 6. On-state input voltage as a function of

collector current; typical values Fig 7. Off-state input voltage as a function of

collector current; typical values

IC (mA)

-10-1 -102

-10-1

006aac824

102

103

hFE

(1)

(2)

(3)

006aac825

IC (mA)

-10-1 -102

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

006aac826

IC (mA)

-10-1 -102

-10-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

IC (mA)

-10-1 -10-1

006aac827

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

Product data sheet Rev. 4 — 7 December 2011 8 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

f=1MHz; T

amb =25CV

CE =5V; T

amb =25C

Fig 8. Collector capacitance as a function of

collector-base voltage; typical values Fig 9. Transition frequency as a function of collector

current; typical values of built-in transistor

VCB (V)

0 -50-40-20 -30-10

006aac828

(pF)

006aac763

IC (mA)

-10-1 -102

-10-1

102

103

(MHz)

Fig 10. Package outline PEMB13 (SOT666) Fig 11. Package outline PUMB13 (SOT363)

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Product data sheet Rev. 4 — 7 December 2011 9 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type

number Package Description Packing quantity

3000 4000 8000 10000

PEMB13 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PUMB13 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

Reflow soldering is the only recommended soldering method.

Fig 12. Reflow soldering footprint PEMB13 (SOT666)

solder lands

placement area

occupied area

solder paste

sot666_fr

2.75

2.45

2.1

1.6

0.4

(6×)

0.55

(2×)

0.25

(2×)

0.6

(2×)

0.65

(2×)

0.3

(2×)

0.325

(4×)

0.45

(4×)

0.5

(4×)

0.375

(4×)

1.72

1.7

1.075

0.538

Dimensions in mm

Product data sheet Rev. 4 — 7 December 2011 10 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Fig 13. Reflow soldering footprint PUMB13 (SOT363)

Fig 14. Wave soldering footprint PUMB13 (SOT363)

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

sot363_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

Section 1 “Product grotile“ Section 4 “Marking“ Figure 1 g Section 5 “Limiting values“ Section 6 “Thermal characteristics" Table 8 “Characteristics“ Section 8 “Test intormation“ Section 9 “Package outline“ Section 10 “Packing intormation“ Section 11 “Soidering” Section 13 “Legal intormation“

Product data sheet Rev. 4 — 7 December 2011 11 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PEMB13_PUMB13 v.4 20111207 Product data sheet - PEMB13_PUMB13 v.3

Modifications: •The format of this document has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Section 1 “Product profile”: updated

•Section 4 “Marking”: updated

•Figure 1 to 9: added

•Section 5 “Limiting values”: updated

•Section 6 “Thermal characteristics”: updated

•Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to

VI(off) off-state input voltage, ICEO updated, fT added

•Section 8 “Test information”: added

•Section 9 “Package outline”: superseded by minimized package outline drawings

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

PEMB13_PUMB13 v.3 20040415 Product data sheet - PEMB13_PUMB13 v.2

PEMB13_PUMB13 v.2 20031211 Product specification - PEMB13 v.1

PEMB13 v.1 20020114 Preliminary specification - -

Product data sheet Rev. 4 — 7 December 2011 12 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

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data sheet shall define the specification of the product as agreed between

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Applications — Applications that are described herein for any of these

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

hngzllwwwmewm salesaddresses@nxp.com

Product data sheet Rev. 4 — 7 December 2011 13 of 14

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

2011For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 December 2011

Document identifier: PEMB13_PUMB13

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

PEMB13,PUMB13 Datasheet by Nexperia USA Inc.

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