BUK764R0-55B Datasheet by Nexperia USA Inc.

Figure 1 Figure 4 Figure 2 Figure 7 Figure 12 nexpefla
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
BUK764R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 55 V
IDdrain current VGS =10V; T
mb =25°C;
see Figure 1; see Figure 4
[1] --75A
Ptot total power
dissipation Tmb =25°C; see Figure 2 - - 300 W
Static characteristics
RDSon drain-source on-state
resistance VGS =10V; I
D=25A;
Tj=25°C; see Figure 7;
see Figure 12
-3.44mΩ
Figure 13 a Wm: a v 1m7 NI mm mm
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 2 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
[1] Continuous current is limited by package.
2. Pinning information
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
ID=75A; V
sup ≤55 V;
RGS =50Ω; VGS =10V;
Tj(init) = 25 °C; unclamped
--1.2J
Dynamic characteristics
QGD gate-drain charge VGS =10V; I
D=25A;
VDS =44V; T
j=25°C;
see Figure 13
-25-nC
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT404 (D2PAK)
2 D drain[1]
3Ssource
mb D mounting base;
connected to drain
mb
13
2
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK764R0-55B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped) SOT404
Figure 1 7 Figure 4 i Figure 1 7 Figure 4 s Figure 2 Figure 3 7 am"... av 1m7 "mum“...
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 3 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
4. Limiting values
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
[3] Refer to document 9397 750 12572 for further information.
[4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[6] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[7] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 55 V
VDGR drain-gate voltage RGS =20kΩ-55V
VGS gate-source voltage -20 20 V
IDdrain current Tmb =25°C; V
GS =10V; see Figure 1;
see Figure 4
[1] -75A
[2][3] - 193 A
Tmb =100°C; V
GS = 10 V; see Figure 1 [1] -75A
IDM peak drain current Tmb = 25 °C; pulsed; tp≤10 µs;
see Figure 4 - 774 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 300 W
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Source-drain diode
ISsource current Tmb =25°C [2][1] - 193 A
[1] -75A
ISM peak source current pulsed; tp≤10 µs; Tmb = 25 °C - 774 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy ID=75A; V
sup ≤55 V; RGS =50Ω;
VGS =10V; T
j(init) = 25 °C; unclamped -1.2J
EDS(AL)R repetitive drain-source
avalanche energy see Figure 3 [4][5][6][
7] --J
V55 2 10V um Pm v 100% :Wmav 2m: mum 15mg
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 4 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature. Fig 2. Normalized total power dissipation as a
function of mounting base temperature
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 150 °C.
(3) Repetitive
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
001aaf871
Tmb (°C)
25 17512575
100
50
150
200
ID
(A)
0
(1)
Tmb (°C)
0 20015050 100
03na19
40
80
120
Pder
(%)
0
003aab677
10
-1
1
10
10
2
10
-3
10
-2
10
-1
1 10
t
AL
(ms)
I
AL
(A)
(1)
(2)
(3)
Tm = 251‘; [Wis single pulse see Figure 5 :N-xplnaBV zuw mum 15mg
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 5 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
(1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03ng55
1
10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
(1)
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to
mounting base see Figure 5 --0.5K/W
Rth(j-a) thermal resistance from junction to
ambient mounted on a printed-circuit
board; minimum footprint -50-K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
03ng56
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
0.02
single shot
0.05
0.1
0.2
tp
T
P
t
tp
T
δ =
Figure 11 Figure 11 Figure 11 Figure 7 Figure 12 Figure 7 W Figure 13 Figure 14 Figure 15 'Wn—Ammm
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 6 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=0.25mA; V
GS =0V; T
j=25°C 55--V
ID=0.25mA; V
GS =0V; T
j= -55 °C 50 - - V
VGS(th) gate-source threshold
voltage ID=1mA; V
DS =V
GS; Tj=25°C;
see Figure 11 234V
ID=1mA; V
DS =V
GS; Tj=-55°C;
see Figure 11 --4.4V
ID=1mA; V
DS =V
GS; Tj= 175 °C;
see Figure 11 1--V
IDSS drain leakage current VDS =55V; V
GS =0V; T
j= 175 °C - - 500 µA
VDS =55V; V
GS =0V; T
j= 25 °C - 0.02 1 µA
IGSS gate leakage current VGS =20V; V
DS =0V; T
j= 25 °C - 2 100 nA
VGS =-20V; V
DS =0V; T
j= 25 °C - 2 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D=25A; T
j= 175 °C;
see Figure 7; see Figure 12 --8mΩ
VGS =10V; I
D=25A; T
j=25°C;
see Figure 7; see Figure 12 -3.44mΩ
Dynamic characteristics
QG(tot) total gate charge ID=25A; V
DS =44V; V
GS =10V;
Tj=25°C; see Figure 13 -86-nC
QGS gate-source charge - 18 - nC
QGD gate-drain charge - 25 - nC
Ciss input capacitance VGS =0V; V
DS =25V; f=1MHz;
Tj=25°C; see Figure 14 - 5082 6776 pF
Coss output capacitance - 1054 1265 pF
Crss reverse transfer
capacitance - 450 617 pF
td(on) turn-on delay time VDS =30V; R
L=1.2Ω; VGS =10V;
RG(ext) =10Ω; Tj=25°C -23-ns
trrise time - 51 - ns
td(off) turn-off delay time - 71 - ns
tffall time - 41 - ns
LDinternal drain
inductance from upper edge of drain mounting base
to centre of die; Tj=25°C -2.5-nH
from drain lead 6 mm from package to
centre of die; Tj=25°C -4.5-nH
LSinternal source
inductance from source lead to source bond pad;
Tj=25°C -7.5-nH
Source-drain diode
VSD source-drain voltage IS=40A; V
GS =0V; T
j=25°C;
see Figure 15 - 0.85 1.2 V
trr reverse recovery time IS=20A; dI
S/dt = -100 A/µs;
VGS =-10V; V
DS =30V; T
j=25°C -95-ns
Qrrecovered charge - 251 - nC
T, = 25“C;f., : 300m 1', = 25“C;ID :ZSA I, : 25°C;V35 : 5V I, : 25%;”: : 25V :N-xplnaEV 2m: mum 15mg
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 7 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8. Sub-threshold drain current as a function of
gate-source voltage Fig 9. Forward transconductance as a function of
drain current; typical values
03nh22
0
50
100
150
200
250
300
0246810
V
DS
(V)
I
D
(A)
V
GS
(V) = 4
5
6
20
10
7
4.5
5.5
6.5
03nh21
3
4
5
6
7
5101520
V
GS
(V)
R
DSon
(m
Ω)
03aa35
VGS (V)
0642
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min typ max
03nh19
0
20
40
60
80
100
120
0204060
I
D
(A)
g
fs
(S)
VD: = 25v l = 1111A;VD Rnson ‘1 = R— DSm‘KZS'C) T, = 25°C;ID =25A “mp.“ av mu an MS 15mg
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 8 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
03nh20
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 175 °C
T
j
= 25 °C
Tj (°C)
−60 180120060
03aa32
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
03ne89
0
0.5
1
1.5
2
-60 0 60 120 180
Tj (°C)
a
03nh18
0
2
4
6
8
10
0 20406080100
Q
G
(nC)
V
GS
(V)
V
DS
(V)
= 14 V
DS
(V) = 44
V55 = our = lMHz VG: = 0V mum; av mu an MS 15mg
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 9 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Reverse diode current as a function of reverse
diode voltage; typical values
03nh24
0
1000
2000
3000
4000
5000
6000
7000
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
03nh17
0
20
40
60
80
100
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(V)
I
D
(A)
T
j
= 175 °C
T
j
= 25 °C
“D‘ ‘Dfl I_I_I_I_I_I_I_I_I_I_I DIMENSIONS (mm are lhe original dimensions) D UNIT A A‘ b c m“ 91 4 50 I 40 u 35 a 54 I so mm 410 I27 use 045 H I20 OUTLINE R VERSION IEC JEDEC 50mm 6 @ Fig 16. Package outline SOT404 (D2PAK) ammo 555 AH mm Producl data sheel :meav 2m: mugmwmu
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 10 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
7. Package outline
Fig 16. Package outline SOT404 (D2PAK)
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
A1D1
D
max. EeL
pHDQc
2.54 2.60
2.20
15.80
14.80
2.90
2.10
11 1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0 2.5 5 mm
scale
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT40
4
e e
E
b
D1
HD
D
Q
Lp
c
A1
A
13
2
mounting
base
05-02-11
06-03-16
alum av 1m7 "mum“...
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 11 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK764R0-55B v.5 20110422 Product data sheet - BUK75_764R0-55B_4
Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Type number BUK764R0-55B separated from data sheet BUK75_764R0-55B_4.
BUK75_764R0-55B_4 20071004 Product data sheet - BUK75_764R0-55B_3
have changed Want an ena mm a mwln- a v Inn A. mm; mm
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 12 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
9.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of a Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
hug //www exgena cum/gmNe/lerms mtg/ww nexge com salesaddresses nexe com alum av 1m7 "mum“...
© Nexperia B.V. 2017. All rights reserved
BUK764R0-55B All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 5 — 22 April 2011 13 of 14
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless
otherwise agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and conditions of the
respective agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Nexperia BUK764R0-55B
N-channel TrenchMOS standard level FET
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
22 April 2011