FDMC86244 Datasheet by onsemi

MOSFET
© Semiconductor Components Industries, LLC, 2012
March, 2021 − Rev. 3
1Publication Order Number:
FDMC86244/D
MOSFET – N-Channel,
Shielded Gate,
POWERTRENCH)
150 V, 9.4 A, 134 mW
FDMC86244,
FDMC86244-L701
General Description
This N−Channel MOSFET is produced using ON Semiconductor‘s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for the on−state
resistance and yet maintain superior switching performance.
Features
•Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
•Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
•Low Profile − 1 mm Max in Power 33
•100% UIL Tested
•These Devices are Pb−Free and are RoHS Compliant
Applications
•DC − DC Conversion
www.onsemi.com
MARKING DIAGRAM
PIN ASSIGNMENT
See detailed ordering and shipping information on page 6 of
this data sheet.
ORDERING INFORMATION
8
7
6
5
S
S
S
G
D
D
D
D
1
2
3
4
FDMC
86244
ALYW
FDMC86244 = Specific Device Code
A = Assembly Site
XY = 2−Digit Date Code
KK = 2−Digit Lot Run Traceability Code
L = Wafer Lot Number
YW = Assembly Start Week
AXYKK
FDMC
86244
ON
FDMC86244 FDMC86244−L701
Bottom
1234
Top
8765
DDD
D
SSG
S
WDFN8 3.3x3.3, 0.65P
CASE 511DR
Bottom
Top
D
DD
D
SSG
S
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
FDMC86244−L701
FDMC86244
00°00 www.cnsem am
FDMC86244, FDMC86244−L701
www.onsemi.com
2
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDS Drain to Source Voltage 150 V
VGS Gate to Source Voltage ±20 V
IDDrain Current Continuous TC = 25°C 9.4 A
Continuous (Note 2a) TA = 25°C 2.8
Pulsed 12
EAS Single Pulse Avalanche Energy (Note 1) 12 mJ
PDPower Dissipation TC = 25°C 26 W
Power Dissipation (Note 2a) TA = 25°C 2.3
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting TJ = 25°C; N−ch: L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V.
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJC Thermal Resistance, Junction to Case 4.7 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 2a) 125
2. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined bythe user’s board design.
a. 53°C/W when mounted on a 1 in2 pad
of 2 oz copper
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
G
DF
DS
SF
SS
G
DF
DS
SF
SS
www.cnsemi.com
FDMC86244, FDMC86244−L701
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 150 − − V
DBVDSS /
DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C−106 −mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V − − 1mA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA2 2.6 4 V
DVGS(th) /
DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25°C− −9−mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.8 A −105 134 mW
VGS = 6 V, ID = 2.4 A −120 186
VGS = 10 V, ID = 2.8 A, TJ = 125°C−199 254
gFS Forward Transconductance VDS = 10 V, ID = 2.8 A −8−S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1 MHz −257 345 pF
Coss Output Capacitance −32 45 pF
Crss Reverse Transfer Capacitance −1.8 5 pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = 75 V, ID = 2.8 A, VGS = 10 V,
RGEN = 6 W
−5.3 11 ns
trRise Time −1.5 10 ns
td(off) Turn−Off Delay Time −9.9 20 ns
tfFall Time −2.3 10 ns
Qg(TOT) Total Gate Charge VGS = 0 V to 10 V, VDD = 75 V, ID = 2.8 A −4.2 5.9 nC
Qg(TOT) Total Gate Charge VGS = 0 V to 5 V, VDD = 75 V, ID = 2.8 A −2.4 3.4 nC
Qgs Total Gate Charge VDD = 75 V, ID = 2.8 A −1.1 −nC
Qgd Gate to Drain “Miller” Charge −1.0 −nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 2.8 A (Note 3) −0.81 1.3 V
VGS = 0 V, IS = 2 A (Note 3) −0.79 1.2
trr Reverse Recovery Time IF = 2.8 A, di/dt = 100 A/ms−48 76 ns
Qrr Reverse Recovery Charge −38 61 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
www.0nsem iiii
FDMC86244, FDMC86244−L701
www.onsemi.com
4
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
0.4
Figure 1. On Region Characteristics
ID, DRAIN CURRENT (A)
0123 54
0
3
6
9
12
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDS, DRAIN TO SOURCE VOLTAGE (V)
036912
0
1
2
3
4
5
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
−75 −50 −25 0 25 50 75 100 125 150
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.4
TJ, JUNCTION TEMPERATURE (°C)
24 10
0
100
200
300
500
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
23456
0
3
6
9
12
VGS, GATE TO SOURCE VOLTAGE (V)
0.4 0.6 0.8 1.0 1.2
0.001
0.1
1
10
20
VGS = 4.5 V
VGS = 4 V
VGS = 5.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 5.5 V
VGS = 4 V VGS = 4.5 V
ID, DRAIN CURRENT (A)
68
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
ID = 2.8 A
VGS = 10 V
ID = 2.8 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
TJ = 125°C
TJ = 25°C
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
TJ = 150°C
TJ = −55°C
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0.01
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
VDS = 5 V
VGS =10V VGS = 6 V
VGS = 5 V
400
0.2
TJ = 25°C
VGS = 5 V
VGS = 6 V
0.6
2.2
TJ = 25°C
TJ = 150°C
TJ = −55°C
:75V www.cnsemi.com
FDMC86244, FDMC86244−L701
www.onsemi.com
5
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
10−410−310−210−11100
0.5
1
10
100
25 50 75 100 125 150
0
2
4
6
10
VGS = 10 V
TC, CASE TEMPERATURE (°C)
VGS = 6 V
RqJC = 4.7°C/W
ID, DRAIN CURRENT (A)
8
0.1 1 10 100 500
0.01
0.1
1
10
20
1 s
10 ms
DC
10 s
100 ms
1 ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RqJA = 125°C/W
TA = 25°C
100 ms
ID, DRAIN CURRENT (A)
0.001
Crss
Coss
Ciss
1
2
4
6
8
10
t, PULSE WIDTH (s)
SINGLE PULSE
RqJA = 125°C/W
TA = 25°C
P(PK), PEAK TRANSIENT
POWER (W)
012345
0
2
4
6
8
10
VDD = 100 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
0.1 1 10 100
1
100
1000
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.001 0.01 0.1 1 2
TJ = 125°C
tAV, TIME IN AVALANCHE (ms)
VDD = 75 V
VDD = 50 V
ID = 2.8 A
f = 1 MHz
VGS = 0 V
TJ = 100°C
TJ = 25°C
IAS, AVALANCHE CURRENT (A)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
10
10 1000
1000
www.cnsemi.com
FDMC86244, FDMC86244−L701
www.onsemi.com
6
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
10
−410
−310
−210
−11 10 100 1000
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RqJA = 125°C/W
DUTY CYCLE−DESCENDING ORDER
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1 / t2
PEAK TJ = PDM x ZqJA x RqJA + TA
0.001
ZqJA, NORMALIZED THERMAL
IMPEDANCE
2
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device Device Marking Package Type Reel Size Tape Width Shipping†
FDMC86244 FDMC86244 WDFN8 3.3x3.3, 0.65P
Power 33
(Pb−Free)
13” 12 mm 3000 / Tape & Reel
FDMC86244−L701 FDMC86244 WDFN8 3.3x3.3, 0.65P
Power 33
(Pb−Free)
13” 12 mm 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
NOTES. H A DTMENSTONS ARE IN MTLLTMETERS I3 5 DTMENsToNs AND TOLERANCES PER ASME v14 5M, zone c. SEATTNG PLANE Is DEFINED av TERMINAL TTPs ONLY l_l r—T r—T l—T— D BODY DTMENSTONS DO NoT TNcLuDE MOLD FLASH PROTRUSIDNS NOR GATE EURRS MOLD FLASH PROTRUSION OR GATE BURR DOES NOT EXCEED 015mm (0 D5)~‘- MTLUMETERS E E A ”M MTN NDM MAX A 0 7o 0 75 0 an A1 0 no , o 05 o 27 o 32 u 37 c 015 o 20 o 25 PM |_: l_l l_l |_A_ D 320 :30 3A0 IDENT D1 01 3 1e 3 20 3 an D3 2.17 2 27 2.37 TOP VIEW E 3.20 3 an 3.40 A , A E1 2 so 3 on 3 m e E2 1 95 2 us 215 E3 0 15 o 20 o 25 // o m c /\ e u 65 BSC 5 G 0 Ac 0 45 o 50 _[ L o 40 o 45 o 50 e u - 12 goua- A. SIDE VTEW SEATTNG PLANE I 4 J__ W W) (1-20) i (170) LEJEVTEEL, I - , w i T w A 1 KEEP ouT I AREA 0 70(4x) *0 max) B3 L A Em ’ as . 98.12%:“5‘ BOTTOM VIEW RECOMMENDED LAND PATTERN
FDMC86244, FDMC86244−L701
www.onsemi.com
7
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE A
m IE @ I_I PINaII IDENT Top VIEW HM 2X Wra7510fl5 I l—D 1510 05 Li- I I -—: 0 02510325 / SIDE VIEW i1 SEATING PLANE 3 3010 05 *2 27 o 05» PIN#1IDENT~\ ._.T(o 79)” “(050W 1 I 4 osmwnsmx) U I U L I ‘ o 35 <1 15)="" \="" i="" i“="" '="" )="" l="" evili,="" laaoxnos="" rd="" is—/="" ‘="" 2="" 002:0="" 05="" u="" 30:0="" 05(3x)="" 1="" ‘="" ‘="" i="" n="" i="" fin="" f="" i="" i="" 5="" 0.3520.05(ax)="" %=""> n In c AIBI BOTTOM VIEW 0 “5‘ C (OPTION A) (3 40) k 2 37 a L, o A5(4x) 7 fl , i I E I I2 22 | I | (1 70) l I __ l I (o 40) I L j ' <0 65)="" 2%?”="" :1]="" m="" m="" ”fe—r="" o="" 70(4x)="" 1="" 441‘me="" 1="" recommended="" land="" pattern="" ‘iiiiiiiiiif’="" pinm="" ident="" top="" view="" -="" 0'05="" 2x="" 3="" 20="" side="" view="" optional="" -="" optional="" ,="" draft="" angle="" tie="" bars="" may="" appear="" on="" all="" a="" may="" appear="" sides="" of="" the="" package7="" in="" these="" all="" www.0nse="" \11“="" dimensions="" as="" per="" option="" a="" unless="" specified="" bottom="" view="" (option="" 3)="">
FDMC86244, FDMC86244−L701
www.onsemi.com
8
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
a a e Mademavks m Semxcunduclm Cnmpnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www mm cumrsuerguwaxem Mavkmg gm ,_ www nnserm cum
FDMC86244, FDMC86244−L701
www.onsemi.com
9
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊