DMN4036LK3 Datasheet by Diodes Incorporated

Product Line of ..... ®, % TTT LNJ DMN4036LK3 1a! a Document number D532122 Rev 2 , 2 WWW.di0deS.COm
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
1 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
40V 36mΩ @ VGS= 10V 12.2A
61mΩ @ VGS= 4.5V 9.4A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN4036LK3-13 N4036L 13 16 2,500
Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
TOP VIEW PIN OUT -TOP VIEW
D
S
G
Equivalent Circuit
GS
D
D
= Manufacturer’s Marking
N4036L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
YYWW
N4036L
TO252-3L
Product Line of m5” 15fo DMN4036LK3 2 cl 3 Document number DSB2122 Rev 2 , 2 WWW.di0dES.CDm
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
2 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage (Note 2) VGS ±20 V
Continuous Drain current VGS = 10V
(Note 4)
ID
12.2
A
TA = 70°C (Note 4) 9.7
(Note 3) 8.5
Pulsed Drain current VGS = 10V (Note 5) IDM 31.7 A
Continuous Source current (Body diode) (Note 4) IS 10.4 A
Pulsed Source current (Body diode) (Note 5) ISM 31.7 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 3)
PD
4.12
33 W
mW/°C
(Note 4) 8.49
67.9
(Note 6) 2.12
16.9
Thermal Resistance, Junction to Ambient
(Note 3)
RθJA
30.3
°C/W
(Note 4) 14.7
(Note 6) 59.0
Thermal Resistance, Junction to Lead (Note 7) R
θ
JL 3.1
Operating and storage temperature range TJ, TSTG -55 to 150 °C
Notes: 2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t ≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Product Line of ZETEX : March 2010 a: Dmdes \ncuvpmaled
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
3 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Thermal Characteristics
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
110
100m
1
10
110
100m
1
10
Tamb=25°C
25mm x 25mm
1oz FR4
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
5
10
15
20
25
30
35
Tamb=25°C
25mm x 25mm
1oz FR4
Transient Thermal Impedance
D=0.5
D=0.2 D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
Safe Operating Area
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Tamb=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
Tamb=25°C
50mm x 50mm
2oz FR4 100µs
1ms
10ms
100ms
1s
DC
RDS(on)
Limited
VDS Drain-Source Voltage (V)
ID Drain Current (A)
Product Line of m5” 15fo Dss ass 655 as m) DMN4036LK3 4 cl 3 Document number DSB2122 Rev 2 , 2 WWW.di0dES.CDm
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
4 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 40 ⎯ ⎯ V ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS = 40V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 3.0 V
ID = 250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 8) RDS (ON) ⎯ 0.026 0.036 Ω VGS = 10V, ID = 12A
0.049 0.061 VGS = 4.5V, ID = 6A
Forward Transconductance (Notes 8 & 9) gfs ⎯ 19.6 ⎯ S VDS = 15V, ID = 12A
Diode Forward Voltage (Note 8) VSD ⎯ 0.96 1.1 V
IS = 12A, VGS = 0V
Reverse recovery time (Note 9) tr
r
112 ⎯ ns IS = 12A, di/dt = 100A/μs
Reverse recovery charge (Note 9) Qr
r
⎯ 926 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss ⎯ 453 ⎯ pF VDS = 20V, VGS = 0V
f = 1MHz
Output Capacitance Coss ⎯ 79.1 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 40.5 ⎯ pF
Total Gate Charge (Note 10) Q
g
⎯ 4.9 ⎯ nC VGS = 4.5V
VDS = 20V
ID = 12A
Total Gate Charge (Note 10) Q
g
⎯ 9.2 ⎯ nC
VGS = 10V
Gate-Source Charge (Note 10) Q
g
s ⎯ 1.7 ⎯ nC
Gate-Drain Charge (Note 10) Q
g
d ⎯ 2.7 ⎯ nC
Turn-On Delay Time (Note 10) tD
on
⎯ 3.2 ⎯ ns
VDD = 20V, VGS = 10V
ID = 12A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 10) t
r
⎯ 11.7 ⎯ ns
Turn-Off Delay Time (Note 10) tD
off
⎯ 11.6 ⎯ ns
Turn-Off Fall Time (Note 10) tf ⎯ 9.5 ⎯ ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Product Line of ZETEX DMN4036LK3 5 ad a Document numbev DSGZ122 Rev. 2 - 2 WWW.dI0deS.DOm
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
5 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
12345
1E-3
0.01
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1 1 10
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
4V
3.5V
10V 4.5V
Output Characteristics
T = 25°C
3V
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
3.5V
10V 4V
2V
2.5V
3V
Output Characteristics
T = 150°C
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID = 12A
VGS(th)
VGS = VDS
ID = 250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
10V
3.5V
4V
3V
On-Resistance v Drain Current
T = 25°C
4.5V
VGS
RDS(on) Drain-Source On-Resistance (Ω)
ID Drain Current (A)
Vgs = 0V
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
Product Line of ZETEX i Pu‘se wuflh < ms="" duty="" mm="" mm="" °="" ;="" dmn4036lk3="" s="" 0!="" a="" document="" number="" d532122="" rev="" 2="" ,="" 2="" www.diodes.com="">
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
6 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Typical Characteristics - continued
0.1 1 10
0
100
200
300
400
500
600
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
VDS - Drain - Source Voltage (V) 0246810
0
2
4
6
8
10
VDS = 20V
ID = 12A
Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage
Q - Charge (nC)
VGS Gate-Source Voltage (V)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)
Product Line of ZETEX ..... : E b3 701 F—fi 3? D I
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
7 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Package Outline Dimensions
DIM Inches Millimeters DIM Inches Millimeters
Min Max Min Max Min Max Min Max
A 0.086 0.094 2.18 2.39 e 0.090 BSC 2.29 BSC
A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41
b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78
b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF
b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC
c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65
c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016
D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52
D1 0.205 - 5.21 - θ1° 0° 10° 0° 10°
E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15°
E1 0.170 - 4.32 - - - - - -
5» Product Line of ' ZE’EX D L
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
8 of 8
www.diodes.com March 2010
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN4036LK3
Suggested Pad Layout
5.8
0.228
1.6
0.063
6.2
0.244
3.0
0.118
6.17
0.243
2.58
0.101
mm
inches
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com