IRFS(L)4615PBF Datasheet by Infineon Technologies

Inlemolioml ISER Rectifier Parameter #4 Q A x. Q In G D S Gale Drawn Source Single Pulse Avalanche Energy (2) Avalanche Currenl (D Repelihve Avalanche Energy (D Symbal Parameter Typ. Max. Units (3)
12/18/08
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HEXFET® Power MOSFET
Benefits
lImproved Gate, Avalanche and Dynamic dV/dt
Ruggedness
lFully Characterized Capacitance and Avalanche
SOA
lEnhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
IRFS4615PbF
IRFSL4615PbF
GDS
Gate Drain Source
PD -96202
S
D
G
D
D
S
G
D2Pak
IRFS4615PbF
TO-262
IRFSL4615PbF
VDSS 150V
RDS(on) typ. 34.5m
max. 42m
ID 33A
Absolute Maximum Ratings
Symbol Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
dv/dt Peak Diode Recovery V/ns
TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Sin
g
le Pulse Avalanche Ener
g
y mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Ener
g
y mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.045
RθJA Junction-to-Ambient (PCB Mount) ––– 40
Max.
33
24
140
0.96
300
°C/W
°C
A
109
See Fig. 14, 15, 22a, 22b,
144
38
-55 to + 175
± 20
movrra'kmo‘ IEZR Recthhe’ Parameter Min. Typ. Max. Uni Canditions (D Symbol Parameter Min. Typ. Max. Units Canditions gfs Forward Transconductance 35 — —— S VD5 : 50V, |D : 21 A Q Tatar Gale Charge — 26 40 ID : 21A Q Gate-m-Source Charge — 8.6 — Q Gate-m-Drarn ("Miller") Charge — 9.0 — @ Q Tatar Gale Charge Sync. (Q - Q ) — 17 — |D : 21A, V :0V, V 5 :10V I Turn-On Deray Time — 15 — vDD : 98V t Rise Time — 35 — t t @ C C C c e". (ER) (5; (6) c e". (TR) (3 (s Symbol Parameter Min. Typ. Max. Uni Canditions r TJ: 2500 vR : 100v, TJ : 12500 J : 5‘ / TJ : 12500 TJ : 2500 9 9
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Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 21A, di/dt ≤ 549A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
s
V(BR)DSS Drain-to-Source Breakdown Volta
g
e 150 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Volta
g
e Temp. Coefficient ––– 0.19 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 34.5 42 mΩ
VGS(th) Gate Threshold Volta
g
e 3.0 ––– 5.0 V
IDSS Drain-to-Source Leaka
e Current ––– ––– 20
––– ––– 250
IGSS Gate-to-Source Forward Leaka
g
e ––– ––– 100
Gate-to-Source Reverse Leaka
g
e ––– ––– -100
RGInternal Gate Resistance ––– 2.7 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
s
g
fs Forward Transconductance 35 ––– ––– S
QgTotal Gate Char
g
e ––– 26 40
Qgs Gate-to-Source Char
g
e ––– 8.6 –––
Qgd Gate-to-Drain ("Miller") Char
g
e ––– 9.0 –––
Qsync Total Gate Char
g
e Sync. (Qg - Qgd)––– 17 –––
td(on) Turn-On Delay Time ––– 15 –––
trRise Time ––– 35 –––
td(off) Turn-Off Delay Time ––– 25 –––
tfFall Time ––– 20 –––
Ciss Input Capacitance ––– 1750 –––
Coss Output Capacitance ––– 155 –––
Crss Reverse Transfer Capacitance ––– 40 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 179 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 382 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
s
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Volta
g
e ––– ––– 1.3 V
trr Reverse Recovery Time ––– 70 ––– TJ = 25°C VR = 100V,
––– 83 ––– TJ = 125°C IF = 21A
Qrr Reverse Recovery Char
g
e ––– 177 ––– TJ = 25°C di
/
dt = 100A
/
µs
––– 247 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 4.9 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is ne
g
li
g
ible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 21A
ID = 21A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 75V
Conditions
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz (See Fig.5)
VGS = 0V, VDS = 0V to 120V (See Fig.11)
VGS = 0V, VDS = 0V to 120V
TJ = 25°C, IS = 21A, VGS = 0V
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 21A
VDS = VGS, ID = 100µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
ID = 21A
RG = 7.3Ω
VGS = 10V
VDD = 98V
ID = 21A, VDS =0V, VGS = 10V
pF
A
––– –––
––– –––
µA
nA
nC
ns
ns
nC
33
140
movna'kmo‘ IEZR Rectflhe’
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
≤60µs PULSE WIDTH
Tj = 25°C
5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
≤60µs PULSE WIDTH
Tj = 175°C
5.0V
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 21A
VGS = 10V
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30 35
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= 21A
movna'kmo‘ IEZR Rectflhe’ PERATION \N THIS Tc : 25%: T1 : 175m
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Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
140
145
150
155
160
165
170
175
180
185
190
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 2.8A
5.3A
BOTTOM 21A
-20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Energy (µJ)
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
5
10
15
20
25
30
35
40
ID, Drain Current (A)
movna'kmo‘ IEZR Rectflhe’ ‘m . 1, Duly Factor D : «1/12 INGLE PULSE pulsewmh, «am assummg he Curr pu‘sewldm, lav,
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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 21A
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.02324 0.000008
0.26212 0.000106
0.50102 0.001115
0.25880 0.005407
A D A ID: 1 omA movna'kmo‘ IEZR Rectflhe’
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Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS(th), Gate threshold Voltage (V)
ID = 100µA
ID = 250uA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/µs)
100
200
300
400
500
600
700
800
QRR (A)
IF = 14A
VR = 100V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
100
200
300
400
500
600
700
800
900
1000
QRR (A)
IF = 21A
VR = 100V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
25
30
IRRM (A)
IF = 14A
VR = 100V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
25
30
35
IRRM (A)
IF = 21A
VR = 100V
TJ = 25°C
TJ = 125°C
Internationoi Ion Rectifier ii :{éufii T T Ti vw 2°) @ Fig 22a. Unciamped Inducnve Test Circuii h##vvwi 1E ,, L Fig 23a. SwiIching Time Tesi Circuik g, Fig 24a. Gaie Charge Test Circun www.irf.com has i " Fig 22b. Unclamped Induciive ~4+w—.~—.' ' ‘ figs! 09:2 09:1 0956! Fig 24b. Gaie Charge Wa
IRFS/SL4615PbF
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Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
FF. (nuw A! InternationOL Ion Rectifier we L WW6 m mmm m M WW 1 MW W N Mm [we] AWN e L E m W mm W W m ML w mm om[nu5'] m 90: was: :Mmuns ARE Musuazu u m: ewcsv Emms or w: mm Bow Aw Wm H C ,, Awmsmn m M a wow To ms: MEVAL om f L 7 cmwewmou we 3 WSW N S WLUMUERS muss ‘3 Lu m‘cwws 9 MN M M MAX 5 /—\‘ A tan b 53 ma 19:: M 551$ M can 0254 000 mu Tr CHE ‘ :77: n 35‘ ” 99 ,C70 D39 2 ‘ ’ DR‘W , .L w :59 m [85 5 s7 we: .. L; Lu m m 5 mm“. 7 we 07. m5 “a L L. De L “mm c‘ DJE 358 0‘5 D21 5 a m Lee. an ass 2 1: 533mm n 535 m m m) e 37 mm L, n 555 7 270 . F 7 ~-W\ 44A,.“ “m E 955. T057 350 m 3. [L m 7 u: . WA 7 E 250 050 mu use M A H NET 15 is 575 525 L ANCIDE ' L We 2 79 No To 2‘ A7 mm: H , ‘65 , 0‘16 A 3 7 MODE L2 m L75 7 mm L5 n25 ESC U13 EEC ‘ PM“ DEFENDEM LL A75 m ‘35 205 D2Pak (TO-263AB) Part Marking Information EXAMPLE. THLS LS AN \RFS’BOS WLTH PART NUMBER LOT CODE 3024 TNTERNARONAL ASSEMBLED ONWW 02‘ 2000 REOTLRER F5305 LNTHE ASSEMBLY UNE ‘L‘ LOGO \ If!!! gm .. L ‘L as 24 DATE CODE / YEAR 0 : 2000 ASSEMBLY LL Note‘ m 0552mm, hne poamon LOT CODE WEEK02 mchares "Lead , Free" LTNEL OR PART NUMBER LNTERNATLONAL REORFLER \ F5305 LOGO IonPaozA~ \ DATE CODE an 2L P : DESLGNATES LEAD7 FREE ASSEMBLY / u PRODUCT (ORTLONAL) LOT OODE E H YEAR 0 : 2000 WEEK02 Nola: For Ihc mos! currcnl drawing please refer In [R website a! 8 A : ASSEMBLYS‘TE CODE
IRFS/SL4615PbF
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D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Internationcd Ion Rectifier ms r Dszsmch mu mmmuc m ASME man my. 2 wmms ax: snuw w wmwvi - was! 0 ‘27 [005’] PER S‘DE WIS: D‘MENMOAS ARE MEASURED AT THE ouwusr Arm m WW 0er WW WW : u. m e H @mm m W m m w W W 7 , auwt cww m are Yarzsz mm mm, mm: mm mm) Wm?! mmsmws uifiwiu m: Acum mm: new: s r v Wmm N w v o L a WWW: Wis r m E MN w. W m E A 405 .3; we we n N: m can w b us usa czu ms m w m age 035 5 M) mww) :77 m 173 045 ma 7 h; m 175 645 um: s r ms nu m5 n29 w a 055 ass 0‘; m s r, w: :2 m we as 055 27mm ) m 965 m m s j: 3%“ m sac , 2m , A z 955 mm m m s. U m , 145 ‘ Ems mm 2 so as: mu age _ A warm L ‘W “m 53B 555 ‘2: (53$ch -m- u , ‘55 7 .055 A 3, {WW F u :35 371 Me ME arCmLECmR r (A L l TO-262 Part Marking Inf EXAMPLE TH‘S‘SAN‘RLMDGL LoTooDEnas PARTNUMEER ASSEMELED ON w u; {9E7 ‘NTERNAT‘ONAL RECT‘F‘ER mum \NTHEASSEMELVUNEC LOGO \ w, mug; ‘7 M DATECDDE / ’ YEAR7=1QQ7 Nate ‘3‘ 'm asscmmy m 905mm ASSEMBLY md‘cales um , me“ LOTCODE WEEK"; UNEC 0R PARTNUMEER \NTERNAT‘ONAL — RECT‘F‘ER A ”mum LOGO \mwm- _ ‘7 sq DATECDDE ASSEMEW P: DESGNATES LEADFREE LOT CODE PRODUCT (OPT‘ONAL) YEAR7=1QQ7 WEEK19 Note: For [he most current drawing please refer Io [R websilc al www.irf.com A = ASSEMBLY SHE ooDE
IRFS/SL4615PbF
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TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Internationcd Ion Rectifier 1 LL Q 7 e E Note: For the most current drawing please rein to [R website at International IeR Rectifier
IRFS/SL4615PbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2008
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IMPORTANT NOTICE The iniormation given in this document shall in no event he regarded as a guarantee or conditions or characteristics (“Beschaffenheitsgarantie”l. With respect to any examples, hints or any typical values stated herein and/or any intormation regarding the application of the product, lnlineon Technologies hereoy disclaims any and all warranties and liaoiities of any klnd, including without limitation warranties of nonclrlfrlrlgemerll orintellectual propeny rights otanythird party In addition, any inlormation given in thisdocument is subject to customers compliance with its abligallans stated in this document and any applicable legal requirements, norms and standardsconcerning customer's products and any use ol the product of lnhneon Technologies in customer'sapplications. The data contained in this document is exclusively intended tor technically trained statt It is the responsibility or customers technical departments to evaluate the suitaoility of the product tor the intended application and the completeness or the product inlormation given in this document with respect to such application Fortunher intormationonthe product, technology, delivery terms and conditions and prices please conta our nearest Infineon Technologies ortice lwww nfineon.coml. Due to technical requirements products may contain dangerous substances. For intormation on the types in question please contact your nearest lntineonTechnologiesoitice. Except as otherWise explicitly approved by lniineon Technologies in a written document signed by authorized representatives of lniineon Technologies, lniineon Technologies' products may not he used in any applications where a failure oi the product or any consequences of the use thereot can reasonably be expected to result in personal inyury
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.