EE-SX1042 Datasheet by Omron Electronics Inc-EMC Div

OI'I'IROH “*9?“ l + \ EH
36 EE-SX1042 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1042
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•14.5-mm-tall model with a deep slot.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
5 min.
Four, C0.3
Four, 0.25
Cross section AA
0.5±0.05
(11.2) (1.92)
14.5 12±0.4
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 10 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age
VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 10 V
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 25.
OI'I'IROD w ‘ ‘54: m ‘ so 50 w ‘ ‘ ‘ .n mu m an w zu I «a o ‘ J ".Aa an 1 20 4» so an yon m l é um a) m c o % m a) u: 1 um 01 1 m Load resistance RL (m) Response Ime Measurement Circuit Wo—l—7— ——-x 90% 0.“me 10% | v, u xnpmgv “ vcc Relative light (2 auzmusns‘uumu m ‘ , mm m, mm we mo «1 w m 70 mm a» 00m 40 an a m w go new mamamzoauwscwmwm 120 we ‘ . ‘ \ opnca‘ axxs)"°‘: \ :7 -*: Ln 2° \ 2: \ 4,5025 0 9,5 g, 0,, .0 720 454B 415 a as m ‘ Dwslance a (mm) EE-SX1042 Photomicrosensor (Transmissive)
EE-SX1042 Photomicrosensor (Transmissive) 37
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation P
C
(mW)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Forward current I
F
(mA)
Forward current I
F
(mA)
Light current I
L
(mA)
Collector−Emitter voltage V
CE
(V)
Light current I
L
(mA)
Ambient temperature Ta (°C)
Load resistance R
L
(kΩ)
IF
PC
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
VCE = 10 V
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CVCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
IF = 20 mA
VCE = 10 V
Ta = 25
°
C
V
CC
= 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current I
L
(%)
Dark current I
D
(nA)
Relative light current I
L
(%)
IF = 50 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
100
80
60
40
20
0−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current I
L
(%)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)