FFSP0865B Datasheet

Silicon Carbide Schottky Diode 0N Semimnduuzior® www.0nsemi.com F“? f O J)”J)
© Semiconductor Components Industries, LLC, 2019
September, 2019 − Rev. 1
1Publication Order Number:
FFSP0865B/D
FFSP0865B
Silicon Carbide Schottky
Diode
650 V, 8 A
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 33 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery / No Forward Recovery
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•General Purpose
•SMPS, Solar Inverter, UPS
•Power Switching Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 650 V
Single Pulse Avalanche Energy (TJ = 25°C,
IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V)
EAS 33 mJ
Continuous Rectified Forward
Current
@ TC < 147 IF8.0 A
@ TC < 135 10.1
Non−Repetitive Peak Forward
Surge Current
TC = 25°C
tP = 10 ms
IFM 551 A
TC = 150°C
tP = 10 ms
498
Non−Repetitive Forward Surge
Current (Half−Sine Pulse)
TC = 25°C
tP = 8.3 ms
IFSM 56 A
Power Dissipation TC = 25°CPtot 73 W
TC = 150°C 12
Operating Junction and Storage Temperature
Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Thermal Resistance, Junction−to−Case, Max. RqJC 2.05 °C/W
MARKING DIAGRAM
www.onsemi.com
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
VRRM IF
650 V 8.0 A
Schottky Diode
1., 3. Cathode 2. Anode
TO−220−2LD
CASE 340BB
$Y&Z&3&K
FFSP
0865B
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSP0865B = Specific Device Code
and ree‘ spe anuanmo www.cnsemi.com
FFSP0865B
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
ON CHARACTERISTICS
Forward Voltage VFIF = 8.0 A, TJ = 25°C 1.39 1.7 V
IF = 8.0 A, TJ = 125°C 1.55 2.0
IF = 8.0 A, TJ = 175°C 1.71 2.4
Reverse Current IRVR = 650 V, TJ = 25°C 0.073 40 mA
VR = 650 V, TJ = 125°C 0.24 80
VR = 650 V, TJ = 175°C 0.48 160
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Capacitive Charge QCVC = 400 V 22 nC
Ctot VR = 1 V, f = 100 kHz 336 pF
VR = 200 V, f = 100 kHz 39
VR = 400 V, f = 100 kHz 30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity
FFSP0865B FFSP0865B TO220 Tube N/A N/A 50 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
/// www.cnsem iiiii
FFSP0865B
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
0.0 0.4 0.8 1.2 1.6 2.0
0
2
4
6
8
TJ= 175oC
TJ= 125oC
TJ= 75oC
TJ= 25 oC
TJ= −55o
IF, FORWARD CURRENT (A)
C
VF, FORWARD VOLTAGE (V)
100 200 300 400 500 600
10 −9
10 −8
10 −7
10
IR, REVERSE CURRENT (A)
−6
VR, REVERSE VOLTAGE (V)
TJ= 175 oC
TJ= 125oC
TJ= −55oC
TJ= 25oC
TJ= 75oC
25 50 75 100 125 150 175
0
20
40
60
80
100
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
IF, PEAK FORWARD CURRENT (A)
D = 1
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 175
0
20
40
60
PTOT , POWER DISSIPATION (W)
80
TC, CASE TEMPERATURE (oC)
0 100 200 300 400 500 600
0
10
20
QC, CAPACITIVE CHARGE (nC)
30
VR, REVERSE VOLTAGE (V)
0.1 1 10 100 650
10
100
CAPACITANCE (pF)
1000
VR, REVERSE VOLTAGE (V)
650
650
<\\\ www.cnsemi.com="">
FFSP0865B
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Stored Energy
Figure 8. Junction−to−Case Transient Thermal Response
0 100 200 300 400 500 600
0
2
4
6
EC, CAPACITIVE ENERGY ( mJ)
8
VR, REVERSE VOLTAGE (V)
650
10−610−510−410−310−210−11
0.001
0.01
0.1
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
2
t, RECTANGULAR PULSE DURATION (sec)
0N Semiwndudw" m + 8.89 4— ‘1 40 6.86 TI l:— 134 1.91 I—> " 1:25 :1; U! u m o III —7 2.54 051 0.33 I 02 a «2.92 0 38 2.03 5‘08 {I} 0.36 ® 0 A 3 NOTES: 5° 5: A. PACKAGE REFERENCE: JEDEC TOZZOJSSUE K, 3° 3: VARIATION ACyDATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5—2009. ON Sannaanaaauanana JarellademavksuISemIcanduclurCnmpunenlslnduslnes Lu: aaa ON Samaanaaaxan mus aaaaaanaann [heumled Slales andJnl mhev aaanInaa ON Sannaanaaaxan naaayaa me mm In make changes annaa. Yunnan nanaa In any prawns nanan 0N Semanduc‘m makes na walvamy represenlalmn an guaranlee nagamnna the aanaanny DI aa manuals Iur any pamcuIav aanaaaa nan dues ON Samaanaaauan aaaama any Mammy anana mun! [he aaanaanan m use a. any pmdudnv anaaa and aaaanaany dIscIaIms any and EH IIahIIIly IncIudmg wxlham IImIIaImn specIaI cansequenhaI m mudeulaI damages ON Sannmnaaaxan dues na. aanyay any naanaa under na pa|em nghls nan [he nama GI nlhers
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
5°
3°
5°
3°
4.80
4.30
10.67
9.65
4.09
3.50
3.43
2.54
9.40
8.38
2.54
5.08
16.51
14.22
14.73
13.60
1.02
0.38
6.35 MAX
1.65
1.25
1.91
0.36 MBAM
0.36 MCAB
A
C
1.40
0.51
7°
3°
6.86
5.84
2.92
2.03
0.61
0.33
5°
3°
5°
3°
B
13.40
12.19
8.89
6.86
0.60 MAX
16.15
15.75
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
1 2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13832G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−220−2LD
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
‘onseml ‘ and my names. mm m mm; are vegmeved and/or comm" law ummm a! Semen ml owns the "gm: m a number a! panems m www onse an an «pm Mark at www onsem: com
onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊