GVGR-S11SD Datasheet

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Features SMD3528 with Si-encapsulant
Indium Gallium Nitride Based Material
PN-type Photodiode
Photovoltaic Mode Operation
High Responsivity & Low Dark Current
Applications UV LED Monitoring (385, 405nm, etc.) Outline Diagrams and Dimensions
Blue LED Monitoring
UVA Lamp Monitoring
UV Curing
Absolute Maximum Ratings
Symbol Unit
T
st
℃
T
op
℃
-30 85O
p
eratin
g
Tem
p
erature
Storage Temperature -40 90
UV / Visible Sensor
GVGR-S11SD
Parameter Min. Max. Remark
Cathode
Anode
T
op
℃
Vr, max. V
If,max. ㎃
Tsol ℃
Characteristics (at 25℃)
Symbol Min. Max. Unit
Id1㎁
Iph ㎁
R A/W
λ 295 490 ㎚
Responsivity Curve Photocurrent along LED Power
Caution
ESD can damage the device hence please avoid ESD.
Vr = 0.1 V
LED (405㎚), 1㎽/㎠
0.07 λ = 405 ㎚, Vr = 0 V
10% of R
Photo Current
Responsivity
Soldering Temperature
1
Dark Current
Spectral Detection Range
44
30
85
within 10 sec.
Parameter Test ConditionsTyp.
260
Forward Current
Operating
Temperature
Reverse Voltage 5
GNF – 722 – 11 (0) Genicom Co., Ltd. 2018-REV1.0-SJ.LEE