APTGT50SK120TG Datasheet by Microchip Technology

OMicrosemL POWER PRODUCTS GROUP vaus mcz m m a : our mvaussENsE mm mm: a saw I uwsus Absolute maximum ratings Symbol Parameter Max r \n | 5 Colleclor 7 Emmer Breakdown Voltage 12 T( 7 25°C 7 1 . C r , C n r -C - 1 r on mucus 0 ea 01 “Ire“ T( 7 80°C 5 I( M Pulsed Collecmr Current T( 7 25°C 10 V0. Gme 7 Emmer Volmge :2 PD Maxunum Power D|ssxpauon T( , 25°C 27 RBSOA Reverse Bias Safe Operalmg Area T1 7 125°C 100A (1? (3A CAUTION: 11mm Dania» um wmunc m Heummuc Unchurgu Prom Hundlmg I’mcc AI’IOSUZ on \\\\\\ mlcrmcm} cum
APTGT50SK120TG
APTGT50SK120TG– Rev 3 October, 2012
www.microsemi.com 1-6
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 75
IC Continuous Collector Current TC = 80°C 50
ICM Pulsed Collector Current TC = 25°C 100
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 277 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
0/VBUS NTC1
OUT
Q1
VBUS NT C2
0/VBUS SENSE
G1
E1
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Fast Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Buck chopper
Fast Trench + Field Stop IGBT3
P
ower Module
GMicrosemL POWER PRODUCTS GROUP Vm Vu ( Vm Vu S ‘mlml Clmmclcrixtic Test Cllmlitiflnx ZVIin T [Wax Uni! Cm C cm T,
APTGT50SK120TG
APTGT50SK120TG– Rev 3 October, 2012
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA
Tj = 25°C 1.7 2.1
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 50A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 3600
Coes Output Capacitance 190
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 160
pF
Td(on) Turn-on Delay Time 90
Tr Rise Time 30
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 18 70
ns
Td(on) Turn-on Delay Time 90
Tr Rise Time 50
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 18 90
ns
Eon Turn-on Switching Energy Tj = 125°C 5
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 50A
RG = 18 Tj = 125°C 5.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 50 A
Tj = 25°C 1.4 1.9
VF Diode Forward Voltage IF = 50A Tj = 125°C 1.3 V
Tj = 25°C 150
trr Reverse Recovery Time Tj = 125°C 250 ns
Tj = 25°C 4.5
Qrr Reverse Recovery Charge Tj = 125°C 9 µC
Tj = 25°C 2.1
Er Reverse Recovery Energy
IF = 50A
VR = 600V
di/dt =2000A/µs
Tj = 125°C 4.2 mJ
GMicrosemL POWER PRODUCTS GROUP Symlml Characteristic Min Typ Max Unit R2; m B 25 x5 T2: s mlml Characteristic Min T v Max Unit 75501025 05,1102 _ 10 + H H g x ; \ , ‘a 9, F 9 9; t 2 ‘ \ 32 :0 25 M w Kn 4340 :0 5C 75,110‘ 3 if) 70 at) £320 5 mac ALL mMmmONs MARKED ARI: TOLERANCED A5
APTGT50SK120TG
APTGT50SK120TG– Rev 3 October, 2012
www.microsemi.com 3-6
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 k
B 25/85 T
25 = 298.15 K 3952 K
TT
B
R
RT
11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.45
RthJC Junction to Case Thermal Resistance Diode 0.58
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
GMicrosemL POWER PRODUCTS GROUP me no so V 3 so 3 an , , : , ,, no 40 7 7 7 7 20 20 o u u u 5 1 1 5 2 2 5 3 3 5 Vastvt mo ‘2 so 10 a so ; 30 E a _ m m 4 20 2 0 o 12 m ._ s 5 e w A 2 a a m 20 30 40 an an m an Gate Resiskance (ohms) o 5 E ‘ 9 04 J g l E 03 1‘ S l E 02 703 a 1m 5 01 701 I? a .5 Smg‘e m 5. 57m u 0 000m 0 0001 o 001 reclzngular
APTGT50SK120TG
APTGT50SK120TG– Rev 3 October, 2012
www.microsemi.com 4-6
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
20
40
60
80
100
00.511.522.533.5
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
20
40
60
80
100
01234
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
20
40
60
80
100
5 6 7 8 9 10 11 12
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eon
Eoff Er
0
2
4
6
8
10
12
0 20406080100
IC (A)
E (mJ)
VCE = 600V
VGE = 15V
RG = 18Ω
TJ = 125°C
Eon
Eoff
Er
0
2
4
6
8
10
12
0 1020304050607080
Gate Resistance (ohms)
E (mJ)
VCE = 600V
VGE =15V
IC = 50A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
20
40
60
80
100
120
0 300 600 900 1200 1500
VCE (V)
IC (A)
VGE=15V
TJ=125°C
RG=18Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
GMicrosemL POWER PRODUCTS GROUP 70 so 50 A0 7 30 2o mm 10 swxlchmg Fmax, Oporatmg Fronuoncy lkH o 10 20 an 40 50 low 09 05 07 04 05 03 02 03 01 Theana mpedance ram 01 3) Smg‘e Mse o 0 00001 n 0001 o om 0 01 01 1 rectangular Pulse Duration (Seconds)
APTGT50SK120TG
APTGT50SK120TG– Rev 3 October, 2012
www.microsemi.com 5-6
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
25
50
75
100
125
150
00.511.522.5
VF (V)
IF (A)
hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
70
80
0 1020304050607080
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D=50%
RG=18Ω
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
GMicrosemL POWER PRODUCTS GROUP DISCLAIMER Ln‘e Supporl Applicallon
APTGT50SK120TG
APTGT50SK120TG– Rev 3 October, 2012
www.microsemi.com 6-6
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.