EABS1D - EABS1J Datasheet by Taiwan Semiconductor Corporation

E EABS1 D - EABS1 J Bridg ® PbAFm R6Hs COMPLIANT I ¢ I MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL EABS1D EABS1G EABS1J UNIT
EABS1D - EABS1J
CREAT BY ART
- Ideal for automated placement, for compact PCB design
- High surge current capability
- Ultrafast reverse recovery time for high frequency
- Negligible leakage current
- Halogen-free according to IEC 61249-2-21
General purpose rectification for AC/DC bridge full wave rectification for SMPS.
PFC function for LED lighting ballast. Also suitable for secondary stage of
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL UNIT
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
I
2
tA
2
s
t
rr
ns
T
J
°C
T
STG
°C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Document Number: DS_D1403002 Version: B15
V
A
400 600
EABS1D EABS1G EABS1J
1
1
200
- 55 to +150
FEATURES
ABS
Weight: 0.09 g (approximately)
Case: Molded plastic body
Maximum average forward rectified current
PARAMETER
Polarity: Polarity as marked on the body
40
1A, 200V - 600V Miniature Ultrafast Glass Passivated Brid
g
e Rectifiers
MECHANICAL DATA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
high frequency inverters.
Taiwan Semiconductor
Note 1: Pulse test with PW=300μs, 1% duty cycle
Operating junction temperature range
Storage temperature range
μA
35
200
Typical thermal resistance
I
R
6.64
- 55 to +150
°C/W
25
80
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
V
F
1.70
Maximum reverse recovery time (Note 2)
R
θJL
R
θJA
Rating for fusing (t<8.3ms)
0.95
600
280 420140
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Moisture sensitivity level: level 1, per J-STD-020
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
200 400
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum DC blocking voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
1.20
E Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING cone PACKING CODE PACKAGE PACKING EXAMPLE PART NO. PACKING CODE SUFFIX SUFFIX I I \
PART NO.
Note 2: Whole series with green compound
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1403002 Version: B15
RATINGS AND CHARACTERISTICS CURVES
PREFERRED P/N
5,000 / 13" Paper reel
EABS1D - EABS1J
Taiwan Semiconductor
PART NO.
SUFFIX
ORDERING INFORMATION
PACKING CODE PACKING CODE
SUFFIX
HRE GABS
RG ABS
DESCRIPTION
1,000 / 7" Plastic reel
PACKING
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX
PACKAGE
EXAMPLE
Note 1: "x" defines voltage from 200V (EABS1D) to 600V (EABS1J)
EABS1x
(Note 1)
EABS1DHREG EABS1D H RE G AEC-Q101 qualified
Green compound
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE (°C)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
0
10
20
30
40
50
110100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine-Wave
0.01
0.1
1
10
100
0 20406080100
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=25°C
TJ=125°C
1
10
100
0.1 1 10 100
JUNCTION CAPACITANCE (pF) a
REVERSE VOLTAGE (V)
FIG. 4 TYPICAL JUNCTION CAPACITANCE
Min Max Min Max
B 4.30 4.50 0.169 0.177
C 6.25 6.65 0.246 0.262
D 0.60 0.70 0.024 0.028
E 3.90 4.10 0.154 0.161
F 4.90 5.10 0.193 0.200
G 1.40 1.60 0.055 0.063
H 1.35 1.45 0.053 0.057
I 0.05 0.15 0.002 0.006
J 0.30 0.70 0.012 0.028
K 0.15 0.25 0.006 0.010
P/N = Specific Device Code
YW = Date Code
F = Factory Code
Document Number: DS_D1403002 Version: B15
MARKING DIAGRAM
D7.22
E2.05
F5.72
B0.9
Unit (inch)
0.059
0.035
C4.22
Unit (inch)
SUGGESTED PAD LAYOUT
Symbol Unit (mm)
A1.5
ABS
0.166
0.284
0.081
0.225
EABS1D - EABS1J
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm)
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
TJ=25°C
TJ=125°C
EABS1 D - EABS1J Taiwan Semiconductor
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1403002 Version: B15
EABS1D - EABS1J
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,