WP7113P3C Datasheet by Kingbright

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© 2019 Kingbright. All Rights Reserved. Spec No: DSAE9716 / 1101005148 Rev No: V.11 Date: 04/03/2019
Page 1 / 4
DESCRIPTION
Made with NPN silicon phototransistor chips
FEATURES
Mechanically and spectrally matched to the infrared
emitting LED lamp
RoHS compliant
APPLICATIONS
Infrared applied systems
Optoelectronic switches
Photodetector control circuits
Sensor technology
PACKAGE DIMENSIONS
WP7113P3C
Phototransistor
Note:
1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.
ABSOLUTE MAXIMUM RATINGS at T
A
=25°C
Parameter Units
Collector-to-Emitter Voltage V
Emitter-to-Collector Voltage V
Power Dissipation at (or below) 25°C Free Air Temperature mW
Operating Temperature °C
Storage Temperature °C
Max.Ratings
30
5
100
-40 to +85
-40 to +85
Lead Soldering Temperature(>5mm for 5sec) 260 °C
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. The specifications, characteristics and technical data described in the datasheet are subject to change
without prior notice.
© 2019 Kingbright. All Rights Reserved. Spec No: DSAE9716 / 1101005148 Rev No: V.11 Date: 04/03/2019
Page 2 / 4
ELECTRICAL / OPTICAL CHARACTERISTICS at T
A
=25°C
WP7113P3C
0%
20%
40%
60%
80%
100%
350 450 550 650 750 850 950 1050 1150
T
a
= 25 °C
Wavelength (nm)
Relative spectral sensitivity (a. u.)
RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH
0.5 0.5
90°
15°
0°
30°
45°
60°
75°
-15°
-30°
-45°
-60°
-75°
-90°
0.01.0 1.0
T
a
= 25 °C
Relative sensitivity
RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT
Parameter Symbol Min. Typ.
Max. Units Test Conditions
Collector-to-Emitter Breakdown Voltage V
BR
CEO
30 - - V I
C
= 100µA
E
e
= 0mW/cm
2
Emitter-to-Collector Breakdown Voltage V
BR
ECO
5 - - V I
E
= 100µA
E
e
= 0mW/cm
2
Collector-to-Emitter Saturation Voltage V
CE (SAT)
- - 0.8 V I
C
= 2mA
E
e
= 20mW/cm
2
Collector Dark Current I
CEO
- - 100 nA V
CE
= 10V
E
e
= 0mW/cm
2
Rise Time(10% to 90%) T
R
- 15 - µS V
CE
= 5V
I
C
= 1mA
R
L
= 1000Ω
Fall Time(90% to 10%) T
F
- 15 - µS
On State Collector Current
I
(ON)
0.5 2.5 - mA
V
CE
= 5V
E
e
= 1mW/cm
2
λ = 940nm
Range of spectral bandwidth
λ
0.1
420 - 1120 nm -
Wavelength of peak sensitivity λ
p
- 940 - nm -
Angle of half sensitivity 2θ1/2 - 20 - deg -
TECHNICAL DATA
PHOTOTRANSISTOR
0
1
2
3
4
5
0 1 2 3 4 5
T
a
= 25 °C
Collector-emitter voltage V
CE
(V)
Collector current (mA)
Ee = 0.25mW/cm
2
Ee = 0.5mW/cm
2
Ee = 1mW/cm
2
0.01
0.1
1
10
100
0.01 0.1 1 10
V
CE
=5V
T
a
= 25 °C
Irradiance Ee (mW/cm
2
)
Collector current Ic (mA)
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100
V
CE
=5V
Ee=1mW/cm
2
Ambient temperature (°C)
Relative collector current (%)
Collector Current vs.
Irradiance
Relative Collector Current vs.
Ambient Temperature
Collector Current vs.
Collector-Emitter Voltage
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© 2019 Kingbright. All Rights Reserved. Spec No: DSAE9716 / 1101005148 Rev No: V.11 Date: 04/03/2019
Page 3 / 4
TECHNICAL DATA
WP7113P3C
PHOTOTRANSISTOR
RECOMMENDED WAVE SOLDERING PROFILE
Notes:
1. Recommend pre-heat temperature of 105°C or less (as measured with a thermocouple
attached to the LED pins) prior to immersion in the solder wave with a maximum solder bath
temperature of 260°C
2. Peak wave soldering temperature between 245°C ~ 255°C for 3 sec (5 sec max).
3. Do not apply stress to the epoxy resin while the temperature is above 85°C.
4. Fixtures should not incur stress on the component when mounting and during soldering process.
5. SAC 305 solder alloy is recommended.
6. No more than one wave soldering pass.
PACKING & LABEL SPECIFICATIONS
0
25
50
75
100
125
0 20 40 60 80 100
Ambient temperature (°C)
Collector power dissipation
Pd (mW)
0.1
1
10
100
1000
0 25 50 75 100
V
CE
= 20V
Ee = 0
Ambient temperature (°C)
Collector dark current (nA)
0.01
0.1
1
10
0 5 10 15 20 25 30
T
a
= 25 °C
Collector-emitter voltage V
CE
(V)
Collector dark current (nA)
Collector Dark Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
Collector Dark Current vs.
Collector-Emitter Voltage
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© 2019 Kingbright. All Rights Reserved. Spec No: DSAE9716 / 1101005148 Rev No: V.11 Date: 04/03/2019
Page 4 / 4
WP7113P3C
PRECAUTIONS
Storage conditions
1. Avoid continued exposure to the condensing moisture environment and keep the product away from rapid transitions in ambient
temperature.
2. LEDs should be stored with temperature ≤ 30°C and relative humidity < 60%.
3. Product in the original sealed package is recommended to be assembled within 72 hours of opening.
Product in opened package for more than a week should be baked for 30 (+10/-0) hours at 85 ~ 100°C.
2. When soldering wires to the LED, each wire joint should be separately insulated with heat-shrink tube to prevent short-circuit contact.
Do not bundle both wires in one heat shrink tube to avoid pinching the LED leads. Pinching stress on the LED leads may damage the
internal structures and cause failure.
3. Use stand-offs
(Fig.1)
or spacers
(Fig.2)
to securely position the LED above the PCB.
4. Maintain a minimum of 3mm clearance between the base of the LED lens and the first lead
bend
(Fig. 3 ,Fig. 4)
.
5. During lead forming, use tools or jigs to hold the leads securely so that the bending force
will not be transmitted to the LED lens and its internal structures. Do not perform lead
forming once the component has been mounted onto the PCB.
(Fig. 5 )
LED Mounting Method
1. The lead pitch of the LED must match the
pitch of the mounting holes on the PCB
during component placement.
Lead-forming may be required to insure
the lead pitch matches the hole pitch.
Refer to the figure below for proper lead
forming procedures.
Note 1-3: Do not route PCB trace in the contact area between the
leadframe and the PCB to prevent short-circuits.
"
○
"
Correct mounting method
" x "
Incorrect mounting method
Lead Forming Procedures
1. Do not bend the leads more than twice.
(Fig. 6 )
2. During soldering, component covers and holders should leave
clearance to avoid placing damaging stress on the LED during
soldering.
(Fig. 7)
3. The tip of the soldering iron should never touch the lens epoxy.
4. Through-hole LEDs are incompatible with reflow soldering.
5. If the LED will undergo multiple soldering passes or face other
processes where the part may be subjected to intense heat,
please check with Kingbright for compatibility.
PRECAUTIONARY NOTES
1. The information included in this document reflects representative usage scenarios and is intended for technical reference only.
2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to
the latest datasheet for the updated specifications.
3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If
customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.
4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening
liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance.
5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright.
6. All design applications should refer to Kingbright application notes available at https://www.KingbrightUSA.com/ApplicationNotes