BTB12-600, 800BW3G-LF Datasheet by Littelfuse Inc.

% Lilleliuse‘ szmseApphed \ Answers mums
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
Thyristors
Surface Mount – 800V > BTB12-600BW3G, BTB12-800BW3G
Blocking Voltage to 800 V
On-State Current Rating
of 12 Amperes RMS at
25°C
Uniform Gate Trigger
Currents in Three
Quadrants
High Immunity to dV/dt
− 2000 V/µs minimum at
125°C
Minimizes Snubber
Networks for Protection
Industry Standard TO-
220AB Package
High Commutating dI/
dt − 4. A/ms minimum at
125°C
These are Pb−Free
Devices
Features
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Description
BTB12-600BW3G, BTB12-800BW3G
Additional Information
Samples
Resources
Datasheet
Pb
Functional Diagram
MT 1
G
MT 2
Pin Out
CASE 221A
STYLE 4
12
% L' leliuse‘
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
Thyristors
Surface Mount – 800V > BTB12-600BW3G, BTB12-800BW3G
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 150°C) BTB12−600BW3G
BTB12−800BW3G VDRM,
VRRM
600
800 V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 12 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 125 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 78 A²sec
Non−Repetitive Surge Peak Off−State Voltage
(TJ = 25°C, t = 10 ms) VDSM/ VRSM
VDSM/ VRSM
+100 V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 W
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20 W
Average Gate Power (TJ = 125°C) PG(AV) 1.0 W
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance Junction−to−Case (AC)
Junction−to−Ambient RƟJC
RƟJA
2.5
60 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds TL260 °C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Ty p Max Unit
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open) TJ = 25°C
TJ = 125°C IDRM,
IRRM
- - 0.005 mA
- - 1.0
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Characteristic Symbol Min Ty p Max Unit
Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) VTM 1.55 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
MT2(+), G(+)
IGT
2.5 − 50
mAMT2(+), G(−) 2.5 50
MT2(−), G(−) 2.5 50
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH 50 mA
Latching Current (VD = 24 V, IG = 60 mA)
MT2(+), G(+)
IL
− 70
mAMT2(+), G(−) 90
MT2(−), G(−) 70
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
MT2(+), G(+)
VGT
0.5 − 1.7
VMT2(+), G(−) 0.5 1.1
MT2(−), G(−) 0.5 1.1
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
VGD
0.2 −
V
MT2(+), G(−) 0.2
MT2(−), G(−) 0.2
% Lilleliuse‘ szmseApphed \ Answers mums
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
Thyristors
Surface Mount – 800V > BTB12-600BW3G, BTB12-800BW3G
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber) (dI/dt)c 4.0 A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − 50 A/µs
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 2000 − V/µs
Voltage Current Characteristic of SCR
Quadrant Definitions for a Triac
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
+C urrent
+V oltage
VTM
IH
IDR M at VDR M
on stat e
off stat e
IRR M at VRR M
Quadrant 1
Main Terminal 2 +
Quadrant 3
Main Terminal 2 VTM
IH
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
MT 1
(+) IGT
GA TE
(+) MT 2
RE F
MT 1
() IGT
GA TE
(+) MT 2
RE F
MT 1
(+) IGT
GA TE
() MT 2
RE F
MT 1
() IGT
GA TE
() MT 2
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
VItnardauQIIItnardauQ
ItnardauQIItnardauQ
IGT +I GT
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© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
Thyristors
Surface Mount – 800V > BTB12-600BW3G, BTB12-800BW3G
Figure 4. Thermal Response
Figure 5. Typical Hold Current Variation
Figure 3. On−State Characteristics
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.1
0.01 4
10001001010.1
VT
100
0
IT
10
1
0.1
MAXIMUM @ T
J = 125°C
TYPICAL AT
TJ = 25°C
MAXIMUM @ T
J = 25°C
Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation
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© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
Thyristors
Surface Mount – 800V > BTB12-600BW3G, BTB12-800BW3G
Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
CL
51
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
RG, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)
5000
4K
3K
2K
1K
010000100010010
µ
VD = 800 Vpk
TJ = 12C
% Lilleliuse‘
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19
Thyristors
Surface Mount – 800V > BTB12-600BW3G, BTB12-800BW3G
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
Dimensions Part Marking System
A
K
L
V
G
D
N
Z
H
Q
FB
12 3
4
SEATING
PLANE
S
R
J
U
TC
Pin Assignment
1Main Terminal 1
2Main Terminal 2
3 Gate
4 No Connection
Ordering Information
Device Package Shipping
BTB12−600BW3G TO−220AB
(Pb−Free) 500 Units / Rail
BTB12−800BW3G TO−220AB
(Pb−Free) 500 Units / Rail
TO 220AB
CASE 221A
STYLE 12
123
4
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
Dim Inches Millimeters
Min Max Min Max
A0.590 0.620 14.99 15.75
B0.380 0.420 9.65 10.67
C0.178 0.188 4.52 4.78
D0.025 0.035 0.64 0.89
F0.142 0.147 3.61 3.73
G0.095 0.105 2.41 2.67
H0.110 0.130 2.79 3.30
J0.018 0.024 0.46 0.61
K0.540 0.575 13.72 14.61
L0.060 0.075 1.52 1.91
N0.195 0.205 4.95 5.21
Q0.105 0.115 2.67 2.92
R0.085 0.095 2.16 2.41
S0.045 0.060 1. 14 1.52
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
BTB12-xBWG
YMAXX
x =6 or 8
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package