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VS-6CWH02FN-M3
www.vishay.com Vishay Semiconductors
Revision: 09-Dec-2019 1Document Number: 93498
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 2 x 3 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 3 A
VR200 V
VF at IF0.9 V
trr typ. See Recovery table
TJ max. 175 °C
Package DPAK (TO-252AA)
Circuit configuration Common cathode
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
DPAK (TO-252AA)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current per device IF(AV) Total device, rated VR, TC = 159 °C 6
ANon-repetitive peak surge current IFSM 50
Peak repetitive forward current per diode IFM Rated VR, square wave, 20 kHz, TC = 159 °C 6
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 200 - -
V
Forward voltage VF
IF = 3 A - 0.9 1
IF = 3 A, TJ = 125 °C - 0.78 0.9
IF = 6 A - 1 1.2
IF = 6 A, TJ = 125 °C - 0.89 1.08
Reverse leakage current IR
VR = VR rated - - 5 μA
TJ = 125 °C, VR = VR rated - - 100
Junction capacitance CTVR = 200 V - 12 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH