VS-6CWH02FN-M3 Datasheet by Vishay General Semiconductor - Diodes Division

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VS-6CWH02FN-M3
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Revision: 09-Dec-2019 1Document Number: 93498
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Ultrafast Rectifier, 2 x 3 A FRED Pt®
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 3 A
VR200 V
VF at IF0.9 V
trr typ. See Recovery table
TJ max. 175 °C
Package DPAK (TO-252AA)
Circuit configuration Common cathode
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
DPAK (TO-252AA)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current per device IF(AV) Total device, rated VR, TC = 159 °C 6
ANon-repetitive peak surge current IFSM 50
Peak repetitive forward current per diode IFM Rated VR, square wave, 20 kHz, TC = 159 °C 6
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 200 - -
V
Forward voltage VF
IF = 3 A - 0.9 1
IF = 3 A, TJ = 125 °C - 0.78 0.9
IF = 6 A - 1 1.2
IF = 6 A, TJ = 125 °C - 0.89 1.08
Reverse leakage current IR
VR = VR rated - - 5 μA
TJ = 125 °C, VR = VR rated - - 100
Junction capacitance CTVR = 200 V - 12 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
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Revision: 09-Dec-2019 2Document Number: 93498
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
nsTJ = 25 °C
IF = 3 A
VR = 160 V
dIF/dt = 200 A/μs
-19-
TJ = 125 °C - 26 -
Peak recovery current IRRM
TJ = 25 °C - 3.1 - A
TJ = 125 °C - 4.6 -
Reverse recovery charge Qrr
TJ = 25 °C - 30 - nC
TJ = 125 °C - 60 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range TJ, TStg -65 - +175 °C
Thermal resistance, junction to case per leg RthJC --5°C/W
Weight -0.3- g
-0.01- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style DPAK (TO-252AA) 6CWH02FN
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
100
Tj = 25 °C
Tj = 125 °C
Tj = 175 °C
V
R
-
Reverse Voltage (V)
IR - Reverse Current (μA)
0.001
0.01
0.1
1
10
100
0 50 100 150 200
25 ˚C
TJ = 175 ˚C
100 ˚C
125 ˚C
150 ˚C
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Revision: 09-Dec-2019 3Document Number: 93498
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
10
100
1 10 100 1000
TJ = 25 ˚C
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.5
D = 0.2
t1 - Rectangular Pulse Duration (s)
Z
thJC - Thermal Impedance (°C/W)
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
012345
130
140
150
160
170
180
DC
see note (1)
Square wave (D = 0.50)
rated VR applied
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0 1 2 3 4 5
0
1
2
3
4
5
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS Limit
DC
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Revision: 09-Dec-2019 4Document Number: 93498
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Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
t
rr
(nC)
dI
F
dt (A/μs)
10
100 1000
20
30
40
50
IF = 3 A
IF = 6 A
VR = 30 V
TJ = 125 °C
TJ = 25 °C
Qrr (nC)
dIFdt (A/μs)
0
20
40
60
80
100
120
140
VR = 30 V
TJ = 125 °C
TJ = 25 °C
1000100
IF = 3 A
IF = 6 A
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
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VS-6CWH02FN-M3
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Revision: 09-Dec-2019 5Document Number: 93498
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-6CWH02FN-M3 75 3000 Antistatic plastic tube
VS-6CWH02FNTR-M3 2000 2000 13" diameter reel
VS-6CWH02FNTRL-M3 3000 3000 13" diameter reel
VS-6CWH02FNTRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
2- Current rating (6 = 6 A)
1- Vishay Semiconductors product
3- Center tap configuration-
4
4- Package identifier:
W = DPAK
5- H = hyperfast recovery
6- Voltage rating (02 = 200 V)
7- FN = TO-252AA
8- None = tube (50 pieces)
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Device code
5
132 4 6 7 8 9
6VS- C W H 02 FN TRL -M3
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
9
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Outline Dimensions
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Revision: 24-Jun-16 1Document Number: 95627
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D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
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