VS-30CTQ0(50,60)(PBF,-N3) Datasheet by Vishay General Semiconductor - Diodes Division

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VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series
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Revision: 11-Oct-11 1Document Number: 94189
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 15 A
VR50 V, 60 V
VF at IF0.56 V
IRM max. 45 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 13 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 30 A
VRRM 50/60 V
IFSM tp = 5 μs sine 1000 A
VF15 Apk, TJ = 125 °C (per leg) 0.56 V
TJRange - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-
30CTQ050PbF
VS-
30CTQ050-N3
VS-
30CTQ060PbF
VS-
30CTQ060-N3 UNITS
Maximum DC reverse voltage VR50 50 60 60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per device
IF(AV) 50 % duty cycle at TC = 105 °C, rectangular waveform
30
A
per leg 15
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
1000
10 ms sine or 6 ms rect. pulse 260
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH 13 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.50 A
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VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 2Document Number: 94189
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
15 A TJ = 25 °C 0.62
V
30 A 0.82
15 A TJ = 125 °C 0.56
30 A 0.71
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.80 mA
TJ = 125 °C 45
Threshold voltage VF(TO) TJ = TJ maximum 0.39 V
Forward slope resistance rt8.47 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 720 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 150 °C
Maximum thermal resistance,
junction to case per leg RthJC DC operation
3.25
°C/W
Maximum thermal resistance,
junction to case per package 1.63
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB 30CTQ050
30CTQ060
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VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 3Document Number: 94189
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
0 0.8 1.2
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.4 1.6
1000
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
2.0
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
20 40 6010
1000
30 50
TJ = 150 °C
TJ = 25 °C
TJ = 50 °C
TJ = 75 °C
TJ = 100 °C
TJ = 125 °C
1000
020 50
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 30 40 60
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1 100
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
PDM
t1
t2
10
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
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VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 4Document Number: 94189
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
60
025
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
120
100
160
80
140
15
Square wave (D = 0.50)
80 % rated VR applied
DC
20105
150
130
110
90
70
See note (1)
12
0
025
4
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
5
2
8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
6
10
10 15 20
14
1000
100 1000
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
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VS-30CTQ0...PbF Series, VS-30CTQ0...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Oct-11 5Document Number: 94189
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30CTQ050PbF 50 1000 Antistatic plastic tube
VS-30CTQ050-N3 50 1000 Antistatic plastic tube
VS-30CTQ060PbF 50 1000 Antistatic plastic tube
VS-30CTQ060-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220ABPbF www.vishay.com/doc?95225
TO-220AB-N3 www.vishay.com/doc?95028
Device code
62 43 5 7
30 C T Q 060 PbFVS-
1
2- Current rating (30 = 30 A)
3
- Package:
- Circuit configuration:
C = Common cathode
T = TO-220
4
- Schottky “Q” series
5
- Voltage ratings
6
7-
1-Vishay Semiconductors product
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
050 = 50 V
060 = 60 V
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TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
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