C2M0025120D Datasheet by Wolfspeed, Inc.

Halogen- Free RoHS D (2) 11) [3D
1C2M0025120D Rev. 5, 04-2021
C2M0025120D
Silicon Carbide Power MOSFET
C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drive
• Pulsed Power Applications
Package
TO-247-3
Part Number Package Marking
C2M0025120D TO-247-3 C2M0025120
V
DS
1200 V
I
D
@
25˚C
63 A
R
DS(on)
25 mΩ
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA
VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values
VGSop Gate - Source Voltage -5/+20 V Recommended operational values
IDContinuous Drain Current
63
AVGS =20 V, TC = 25˚C Fig. 19
Note 1
39 VGS =20 V, TC = 100˚C
ID(pulse) Pulsed Drain Current 250 A Pulse width tP limited by Tjmax Fig. 22
PDPower Dissipation 378 W TC=25˚C, TJ = 150 ˚C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to
+150 ˚C
TLSolder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
MdMounting Torque 1
8.8
Nm
lbf-in M3 or 6-32 screw
Note (1): Die limits are 90A (25°C) and 60A (100°C)
7:: :: E A :,:;—2- !’ __ii_ _ g“
2C2M0025120D Rev. 5, 04-2021
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA
VGS(th) Gate Threshold Voltage 2.0 2.6 4 VVDS = VGS, ID = 15mA Fig. 11
2.3 VVDS = VGS, ID = 15mA, TJ = 150 °C
IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance 25 34 mΩ VGS = 20 V, ID = 50 A Fig.
4,5,6
41 VGS = 20 V, ID = 50 A, TJ = 150 °C
gfs Transconductance 24.6 SVDS= 20 V, IDS= 50 A Fig. 7
24 VDS= 20 V, IDS= 50 A, TJ = 150 °C
Ciss Input Capacitance 3140
pF
VGS = 0 V
VDS = 1000 V
f = 1 MHz
VAC = 25 mV
Fig.
17,18
Coss Output Capacitance 224
Crss Reverse Transfer Capacitance 9
Eoss Coss Stored Energy 128 μJ Fig 16
EON Turn-On Switching Energy (Body Diode) 2.18
mJ
VDS = 800 V, VGS = -5/20 V,
ID = 50A, RG(ext) = 2.5Ω,L= 99 μH
FWD = Internal Body Diode of MOSFET
Fig. 25
EOFF Turn Off Switching Energy (Body Diode) 0.68
EON Turn-On Switching Energy (External SiC Diode) 1.14
mJ
VDS = 800 V, VGS = -5/20 V,
ID = 50A, RG(ext) = 2.5Ω,L= 99 μH
FWD = External SiC Diode
Fig. 25
EOFF Turn Off Switching Energy (External SiC Diode) 0.8
td(on) Turn-On Delay Time 15
ns
VDD = 800 V, VGS = -5/20 V
ID = 50 A,
RG(ext) = 2.5 Ω, Inductive Load
Timing relative to VDS
Per IEC60747-8-4 pg 83
Fig. 27
trRise Time 58
td(off) Turn-Off Delay Time 33
tfFall Time 17
RG(int) Internal Gate Resistance 1.0 Ωf = 1 MHz, VAC = 25 mV, ESR of CISS
Qgs Gate to Source Charge 46
nC
VDS = 800 V, VGS = -5/20 V
ID = 50 A
Per IEC60747-8-4 pg 21
Fig. 12Qgd Gate to Drain Charge 71.5
QgTotal Gate Charge 194
m» g“
3C2M0025120D Rev. 5, 04-2021
Reverse Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage 4.1 V VGS = - 5 V, ISD = 25 A Fig. 8, 9,
10
3.5 V VGS = - 5 V, ISD = 25 A, TJ = 150 °C
ISContinuous Diode Forward Current 63 VGS = - 5 V, TC= 25 °C Note 2
IS, pulse Diode Pulse Current 250 VGS = - 5 V, Pulse width tP limited by Tjmax
trr Reverse Recovery Time 33 ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
VR = 800 V
dif/dt = 2180 A/µs Note 2Qrr Reverse Recovery Charge 487 nC
Irrm Peak Reverse Recovery Current 24 A
trr Reverse Recovery Time 67 ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
VR = 800 V
dif/dt = 1320 A/µs Note 2Qrr Reverse Recovery Charge 386 nC
Irrm Peak Reverse Recovery Current 15 A
Note (2): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.24 0.33 °C/W Fig. 21
RθJC Thermal Resistance from Junction to Ambient 40
Typical Performance .s 152.5 £53.:En 2...: x .8523. .5 .28.... x $533.. .5 2. __..§53§3,=_2n 2. _ _§:5§=3.=_.5 75.3.... x 685:3. .5
4C2M0025120D Rev. 5, 04-2021
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(P.U.)
Junction Temperature, T
j
(°C)
Conditions:
IDS = 50 A
VGS = 20 V
tp< 200 µs
0
30
60
90
120
150
0.0 2.5 5.0 7.5 10.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
j
= 150 °C
tp = < 200 µs
V
GS
= 10V
V
GS
= 18V
V
GS
= 16V
V
GS
= 14V
V
GS
= 12V
V
GS
= 20V
0
30
60
90
120
150
0.0 2.5 5.0 7.5 10.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
j
= -55 °C
tp = < 200 µs
V
GS
= 10V
V
GS
= 18V
V
GS
= 16V
V
GS
= 14V
V
GS
= 12V
V
GS
= 20V
0
30
60
90
120
150
0.0 2.5 5.0 7.5 10.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 10V
V
GS
= 18V
V
GS
= 16V
V
GS
= 14V
V
GS
= 12V
V
GS
= 20V
Figure 2. Output Characteristics TJ = 25 °C
Typical Performance
Figure 1. Output Characteristics TJ = -55 °C
0
10
20
30
40
50
60
020 40 60 80 100 120 140 160
On Resistance, R
DS On
(mOhms)
Drain-Source Current, I
DS
(A)
V
GS
= 20 V
t
< 200 µs
T
j
= 150 °C
T
j
= -55 °C
T
j
= 25 °C
0
10
20
30
40
50
60
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(mOhms)
Junction Temperature, T
j
(°C)
Conditions:
I
DS
= 50 A
t
p
< 200 µs
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 20 V
Figure 3. Output Characteristics TJ = 150 °C
Figure 4.
Normalized On-Resistance vs. Temperature
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
5C2M0025120D Rev. 5, 04-2021
Typical Performance
0
20
40
60
80
100
0246810 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 25 °C T
J
= -55 °C
T
J
= 150 °C
-150
-120
-90
-60
-30
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= -55°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -5 V V
GS
= 0 V
-150
-120
-90
-60
-30
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= 25°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -5 V V
GS
= 0 V
-150
-120
-90
-60
-30
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= 150°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -5 V
V
GS
= 0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 025 50 75 100 125 150
Threshold Voltage, V
th
(V)
Junction Temperature T
J
(°C)
Conditons
V
GS
= V
DS
I
DS
= 15 mA
-5
0
5
10
15
20
25
040 80 120 160 200
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Conditions:
I
DS
= 50 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
Figure 7. Transfer Characteristic For
Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristic
6C2M0025120D Rev. 5, 04-2021
Typical Performance
Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16.
Output Capacitor Stored Energy
Figure 17.
Capacitances vs. Drain-Source
Voltage (0-200 V)
Figure 18.
Capacitances vs. Drain-Source
Voltage (0-1000 V)
-150
-120
-90
-60
-30
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= -55 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
V
GS
= 20 V
-150
-120
-90
-60
-30
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= 25 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
V
GS
= 20 V
-150
-120
-90
-60
-30
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
j
= 150 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
V
GS
= 20 V
0
40
80
120
160
200
0200 400 600 800 1000 1200
Stored Energy, E
OSS
(µJ)
Drain to Source Voltage, V
DS
(V)
1
10
100
1000
10000
050 100 150 200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
rss
1
10
100
1000
10000
0200 400 600 800 1000 1200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
rss
umm by x n- 2. __.__u:=uu:=8.=_:u % :7 .361. N 6:51.... #33 522:: Figure 21. Transiem Thermal Impedance n.5 ' I I _— Typical Performance
7C2M0025120D Rev. 5, 04-2021
Typical Performance
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 21. Transient Thermal Impedance
(Junction - Case) Figure 22. Safe Operating Area
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
0
20
40
60
80
100
-50 -25 025 50 75 100 125 150
Drain-Source Continous Current, IDS (DC) (A)
Case Temperature, TC(°C)
Conditions:
TJ≤ 175 °C
Conditions:
TJ≤ 150 °C
0
50
100
150
200
250
300
350
400
-50 -25 025 50 75 100 125 150
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
TJ≤ 150 °C
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0.01
0.10
1.00
10.00
100.00
0.1 110 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
10 µs
Conditions:
TC= 25 °C
D = 0,
Parameter: tp
Limited by RDS On
1 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
020 40 60 80 100
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
EOff
EOn
ETotal
Conditions:
TJ=
VDD =
RG(ext) =
VGS =
FWD =
L =
25 °C
600 V
2.5 Ω
-5/+20 V
C2M0025120D
99 μH
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
020 40 60 80 100
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
EOff
EOn
ETotal
Conditions:
TJ=
VDD =
RG(ext) =
VGS =
FWD =
L =
25 °C
800 V
2.5 Ω
-5/+20 V
C2M0025120D
99 μH
Typical Performance 1mm rec cancer—:22;
8C2M0025120D Rev. 5, 04-2021
Typical Performance
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 27. Switching Times vs. RG(ext)
Figure 28. Switching Times Definition
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 5 10 15 20 25
Switching Loss (mJ)
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:
TJ=
VDD =
IDS =
VGS =
FWD =
L =
25 °C
800 V
50 A
-5/+20 V
C2M0025120D
99 μH
0
0.5
1
1.5
2
2.5
3
3.5
4
025 50 75 100 125 150 175 200
Switching Loss (mJ)
Junction Temperature, T
J
(°C)
EOff
EOn
ETotal
Conditions:
IDS =
VDD =
RG(ext) =
VGS =
L =
FWD =
FWD =
50 A
800 V
2.5 Ω
-5/+20 V
99 μH
C2M0025120D
ETotal with Schottky
EOn with Schottky
EOff with Schottky
C4D20120A
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25
Switching Times (ns)
External Gate Resistor RG(ext) (Ohms)
td(o ff)
Conditions:
TJ=
VDD =
IDS =
VGS =
FWD =
tr
tf
td(on)
25 °C
800 V
50 A
-5/+20 V
C2M0025120D
Test Circuit Schematic m Car \| /|
9C2M0025120D Rev. 5, 04-2021
Test Circuit Schematic
ESD Test Resulting Classification
ESD-HBM 3A (4000V - 8000V)
ESD-CDM C3 (>=1000V)
ESD Ratings
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
v. I__ ® Package Dimensions *5, E2 (27 my NH: 0 3x L e 02903 B Ajay wuz Recommended Solder Pad Layout .114 .03 '*:O—¢—f 2 Au o_i TO»247-3
10 C2M0025120D Rev. 5, 04-2021
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e .214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T9˚ 11˚ 9˚ 11˚
U9˚ 11˚ 9˚ 11˚
V2˚ 8˚ 2˚ 8˚
W2˚ 8˚ 2˚ 8˚
Pinout Information:
• Pin 1 = Gate
• Pin 2, 4 = Drain
• Pin 3 = Source
T U
WV
m» g“
1111 C2M0025120D Rev. 5, 04-2021
Copyright © 2021 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Notes
Related Links
• C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support